MT48LC16M8A2P-75:G TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 347 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 8
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC16M8A2P-75:G TR – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC16M8A2P-75:G TR is a 128 Mbit volatile SDRAM device organized as 16M × 8 with a parallel memory interface and commercial operating range. It implements fully synchronous SDR SDRAM architecture with internal pipelining and banked memory to support high-throughput, system-clock-synchronous data transfers.

Targeted at designs requiring PC100/PC133-compatible SDRAM performance, this device offers a 133 MHz clock speed (‑75 speed grade), a 3.3 V supply window, and a compact 54-pin TSOP II package for space-efficient board implementation.

Key Features

  • Core / Memory Architecture 128 Mbit SDRAM organized as 4 Meg × 8 × 4 banks (16M × 8). Fully synchronous operation with registered signals on the positive clock edge, per datasheet specifications.
  • Performance 133 MHz clock frequency for the -75 speed grade with target timing of RCD‑RP‑CL = 3‑3‑3 (20 ns) as specified in the datasheet. Access time is listed at 5.4 ns in the product specifications.
  • Interface & Timing Parallel SDRAM interface with programmable burst lengths (1, 2, 4, 8, or full page), internal pipelined operation allowing column address changes every clock cycle, and write cycle time (word/page) of 15 ns.
  • Refresh & Power Management Supports auto refresh and self-refresh modes; datasheet lists 64 ms / 4096-cycle refresh (commercial and industrial options) and both standard and low-power self-refresh options (availability depends on device option).
  • Voltage & I/O Levels Single‑supply operation at 3.3 V ±0.3 V (specified range 3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs as noted in the datasheet.
  • Package 54‑pin TSOP II (0.400", 10.16 mm width) plastic package (54‑TSOP II) for compact PCB implementation and surface‑mount assembly.
  • Operating Range Commercial temperature rating: 0°C to +70°C (TA) as provided in the product specifications.

Typical Applications

  • PC100/PC133 system memory — Suitable for designs and legacy platforms requiring PC100/PC133‑compliant SDRAM timing and interface.
  • Embedded system memory — Provides 128 Mbit of parallel SDRAM for embedded controllers and devices that need synchronous external memory.
  • Buffering and frame storage — Compact 54‑TSOP II packaging and banked SDRAM organization make it appropriate for data buffering and temporary frame storage in space‑constrained designs.

Unique Advantages

  • PC100/PC133 timing compatibility: Documented -75 speed grade and 133 MHz clock support compatibility with systems designed to these timing classes.
  • Banked, pipelined architecture: Internal banks and pipelined operation allow overlapping row access/precharge and column operations to improve sustained data throughput.
  • Flexible burst and refresh options: Programmable burst lengths and auto/self‑refresh modes provide flexible tradeoffs between throughput and power management.
  • Compact surface‑mount package: 54‑pin TSOP II (0.400") format minimizes PCB area while providing a full parallel SDRAM interface.
  • Standard 3.3 V supply range: 3.0 V to 3.6 V operating range aligns with common 3.3 V system supplies for straightforward integration.
  • Commercial temperature rating: Specified 0°C to +70°C operating range for mainstream applications.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC16M8A2P-75:G TR delivers a straightforward, standards‑based SDRAM solution for designs needing 128 Mbit of synchronous parallel memory with PC100/PC133 timing. Its 16M × 8 organization, banked architecture and programmable burst modes offer designers explicit control over performance and refresh behavior while the 54‑TSOP II package supports compact board layouts.

This device is suited to customers designing commercial temperature-range systems that require a proven, synchronous 3.3 V SDRAM building block with defined timing characteristics and flexible memory control options as documented in the product specifications and datasheet.

Request a quote or submit a sales inquiry to obtain pricing, availability and lead‑time information for the MT48LC16M8A2P-75:G TR.

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