MT48LC16M8A2P-75 IT:G

The MT48LC16M8A2P-75 IT:G is a 128 Mbit SDR SDRAM organized as 16M × 8 with a parallel memory interface and 4 internal banks. It provides fully synchronous, pipelined operation and timing suited to 133 MHz system clocks for embedded and industrial applications that require standard SDRAM memory.

This device targets designs that need compact board-level DRAM in a 54-pin TSOP II footprint with an industrial operating range and standard 3.3 V-class supply compatibility.

Key Features

• Core / Architecture x8 SDR SDRAM organization (16M × 8) with 4 internal banks for hidden row access and pipelined operation.
• Performance & Timing Rated for 133 MHz clock frequency; specified access time 5.4 ns and target timing for the -75 speed grade. Programmable CAS latency and internal pipelined operation allow column address changes every clock cycle.
• Memory Capacity & Format 128 Mbit density in a DRAM format (4 Meg × 8 × 4 banks logical organization), supporting programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh & Self-Refresh Supports auto refresh and self-refresh modes (standard and low power noted in datasheet where applicable) and 4K refresh cycles (64 ms / 4096 cycles for commercial and industrial options).
• Interface & Operation Parallel memory interface with LVTTL-compatible inputs/outputs; fully synchronous operation with all signals registered on the positive clock edge.
• Power & Voltage Single 3.3 V-class supply with specified supply range of 3.0 V to 3.6 V.
• Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; industrial operating temperature range −40 °C to +85 °C (TA).
• Write & Cycle Timing Write cycle time (word/page) specified at 15 ns for supported operations, enabling standard SDRAM write timing behavior.

Unique Advantages

• Industrial temperature rating: Specified for −40 °C to +85 °C to support temperature-constrained embedded systems.
• PC100/PC133 compliance: Documented compliance in the datasheet for PC100 and PC133 environments, enabling use in legacy and existing SDRAM designs.
• Flexible burst and bank architecture: Programmable burst lengths and four internal banks allow efficient data throughput and reduced row-precharge overhead.
• Standard 3.3 V-class supply: Operates across a 3.0 V to 3.6 V range suitable for common system power rails.
• Compact board-level footprint: 54-pin TSOP II package provides a small, manufacturable form factor for space-constrained PCB layouts.

Why Choose MT48LC16M8A2P-75 IT:G?

The MT48LC16M8A2P-75 IT:G delivers a proven SDR SDRAM architecture with 128 Mbit density, PC100/PC133-class timing, and industrial temperature capability—making it suitable for embedded applications that require a compact, parallel DRAM solution. Its pipelined internal operation, programmable burst lengths and refresh options provide predictable timing and efficient data handling for system designs.

Designed and supported by Micron Technology, this device is intended for engineers and procurement teams seeking a standardized 3.3 V-class SDRAM in a 54-pin TSOP II package that balances capacity, timing flexibility, and industrial temperature operation.

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