MT48LC4M16A2P-7E IT:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 238 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E IT:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-7E IT:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDRAM architecture with internal banks and programmable burst operation for system memory and buffering applications.
Designed for applications requiring PC133-class timing and industrial temperature operation, this device combines 133 MHz clock support and a compact 54‑TSOP footprint with a single +3.3 V supply range (3.0 V to 3.6 V).
Key Features
- Memory Core 64 Mbit SDRAM organized as 4M × 16 with 4 internal banks; supports programmable burst lengths of 1, 2, 4, 8 or full page.
- Performance & Timing PC66/PC100/PC133-compliant family; specified clock frequency 133 MHz and access time listed as 5.4 ns with a word/page write cycle time of 14 ns.
- Interface & Operation Fully synchronous operation with all signals registered on the positive edge of the system clock; LVTTL‑compatible inputs and outputs and parallel memory interface.
- Refresh & Power Modes Auto Refresh, Concurrent Auto Precharge and Auto Precharge modes supported, plus self-refresh modes (standard and low power) and a 64 ms, 4,096‑cycle refresh specification.
- Voltage & Supply Single +3.3 V supply range specified as 3.0 V to 3.6 V.
- Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) package; specified operating temperature range −40 °C to +85 °C (TA).
Typical Applications
- Industrial Controls Memory for embedded controllers and PLCs operating across −40 °C to +85 °C where a 3.3 V parallel SDRAM is required.
- Embedded Systems System memory or frame buffering in legacy and compact embedded platforms that use parallel SDRAM interfaces and PC133-class timing.
- Communications Equipment Temporary data storage and buffering for networking or telecom modules that benefit from synchronous burst transfers and internal bank architecture.
Unique Advantages
- PC133-Class Timing: Enables 133 MHz clock operation for designs targeting PC100/PC133 timing compatibility.
- Flexible Burst Operation: Programmable burst lengths (1, 2, 4, 8, full page) simplify data-transfer optimization for different access patterns.
- Industrial Temperature Range: −40 °C to +85 °C operation supports deployment in harsh or temperature-sensitive environments.
- Compact TSOP II Package: 54‑pin TSOP II (400 mil / 10.16 mm) provides a small footprint for space-constrained board layouts.
- Standard +3.3 V Supply: Operates from 3.0 V to 3.6 V to align with common system power rails.
- Refresh and Power Management: Auto Refresh, Auto Precharge and self-refresh modes reduce system-level refresh management overhead.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC4M16A2P-7E IT:G TR delivers a straightforward, industry‑aligned SDRAM option for designs that require 64 Mbit density, parallel interface compatibility, and PC133-class timing. Its internal bank architecture and programmable burst modes support efficient data throughput while standard refresh and self‑refresh features simplify memory maintenance.
This device is suited to engineers specifying a proven SDRAM component in a 54‑pin TSOP II package with a wide operating temperature window and standard +3.3 V supply requirements. It is a practical choice for embedded, industrial, and communications designs needing reliable synchronous DRAM behavior from a recognized memory supplier.
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