MT48LC4M16A2P-7E:G
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 874 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E:G – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-7E:G is a 64 Mbit synchronous DRAM (SDRAM) organized as 4M × 16 with a parallel memory interface in a 54-pin TSOP II package. It is built for commercial-temperature applications and provides PC66/PC100/PC133-compliant synchronous DRAM functionality with internal banks and pipelined operation.
Designed for systems requiring a parallel SDRAM device with a 3.0–3.6 V supply range and LVTTL-compatible I/O, this device targets designs that need documented SDRAM timing, programmable burst lengths and standard auto-refresh/self-refresh features.
Key Features
- Core / Architecture Fully synchronous SDRAM with internal pipelined operation and multiple internal banks to hide row access and precharge.
- Memory Organization 64 Mbit capacity organized as 4M × 16 with 4 banks.
- Performance PC66-, PC100-, and PC133-compliant operation; specified clock frequency up to 133 MHz and an access time of 5.4 ns.
- Programmability & Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh modes, and standard and low-power self-refresh options with a 64 ms/4,096-cycle refresh.
- Interface Parallel memory interface with LVTTL-compatible inputs and outputs to integrate with common logic-level systems.
- Power Single-supply operation at nominal +3.3 V with an allowable supply range of 3.0–3.6 V.
- Package 54-pin TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
- Temperature Range Commercial operating temperature 0 °C to +70 °C (TA).
Typical Applications
- Commercial embedded systems — Provides parallel SDRAM memory for controllers and embedded platforms operating in commercial temperature ranges.
- PC100 / PC133-compatible designs — Suitable for memory subsystems requiring PC66/PC100/PC133-compliant SDRAM devices and documented timing.
- Board-level memory expansion — Compact 54-pin TSOP II package enables adding 64 Mbit SDRAM to compact PCBs where a parallel interface is required.
Unique Advantages
- Documented synchronous operation — Fully synchronous design with registered signals on the clock edge simplifies timing integration into synchronous systems.
- Flexible burst and refresh modes — Programmable burst lengths and multiple refresh/self-refresh options help balance throughput and power management.
- Industry timing compatibility — PC66/PC100/PC133 compliance and 133 MHz clock capability make it straightforward to match legacy and established timing domains.
- Standard voltage and LVTTL I/O — Single +3.3 V supply and LVTTL-compatible inputs/outputs ease interface with common logic families.
- Compact TSOP II footprint — 54-pin TSOP II package supports dense board layouts while providing full parallel SDRAM pinout.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC4M16A2P-7E:G offers a documented, synchronous 64 Mbit SDRAM solution with PC66/PC100/PC133 timing compatibility, internal banking and pipelined operation for predictable performance in commercial-temperature designs. Its LVTTL I/O, single +3.3 V supply range, and compact 54-pin TSOP II package make it suitable for systems that require a parallel-interface SDRAM with defined refresh and burst capabilities.
This device is appropriate for designers and procurement teams seeking a Micron-documented SDRAM component with clear electrical and timing specifications, compact board-level packaging, and commercial-temperature operation.
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