MT48LC4M16A2P-7E:G

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 874 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2P-7E:G – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2P-7E:G is a 64 Mbit synchronous DRAM (SDRAM) organized as 4M × 16 with a parallel memory interface in a 54-pin TSOP II package. It is built for commercial-temperature applications and provides PC66/PC100/PC133-compliant synchronous DRAM functionality with internal banks and pipelined operation.

Designed for systems requiring a parallel SDRAM device with a 3.0–3.6 V supply range and LVTTL-compatible I/O, this device targets designs that need documented SDRAM timing, programmable burst lengths and standard auto-refresh/self-refresh features.

Key Features

  • Core / Architecture Fully synchronous SDRAM with internal pipelined operation and multiple internal banks to hide row access and precharge.
  • Memory Organization 64 Mbit capacity organized as 4M × 16 with 4 banks.
  • Performance PC66-, PC100-, and PC133-compliant operation; specified clock frequency up to 133 MHz and an access time of 5.4 ns.
  • Programmability & Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh modes, and standard and low-power self-refresh options with a 64 ms/4,096-cycle refresh.
  • Interface Parallel memory interface with LVTTL-compatible inputs and outputs to integrate with common logic-level systems.
  • Power Single-supply operation at nominal +3.3 V with an allowable supply range of 3.0–3.6 V.
  • Package 54-pin TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
  • Temperature Range Commercial operating temperature 0 °C to +70 °C (TA).

Typical Applications

  • Commercial embedded systems — Provides parallel SDRAM memory for controllers and embedded platforms operating in commercial temperature ranges.
  • PC100 / PC133-compatible designs — Suitable for memory subsystems requiring PC66/PC100/PC133-compliant SDRAM devices and documented timing.
  • Board-level memory expansion — Compact 54-pin TSOP II package enables adding 64 Mbit SDRAM to compact PCBs where a parallel interface is required.

Unique Advantages

  • Documented synchronous operation — Fully synchronous design with registered signals on the clock edge simplifies timing integration into synchronous systems.
  • Flexible burst and refresh modes — Programmable burst lengths and multiple refresh/self-refresh options help balance throughput and power management.
  • Industry timing compatibility — PC66/PC100/PC133 compliance and 133 MHz clock capability make it straightforward to match legacy and established timing domains.
  • Standard voltage and LVTTL I/O — Single +3.3 V supply and LVTTL-compatible inputs/outputs ease interface with common logic families.
  • Compact TSOP II footprint — 54-pin TSOP II package supports dense board layouts while providing full parallel SDRAM pinout.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC4M16A2P-7E:G offers a documented, synchronous 64 Mbit SDRAM solution with PC66/PC100/PC133 timing compatibility, internal banking and pipelined operation for predictable performance in commercial-temperature designs. Its LVTTL I/O, single +3.3 V supply range, and compact 54-pin TSOP II package make it suitable for systems that require a parallel-interface SDRAM with defined refresh and burst capabilities.

This device is appropriate for designers and procurement teams seeking a Micron-documented SDRAM component with clear electrical and timing specifications, compact board-level packaging, and commercial-temperature operation.

Request a quote or contact sales for pricing, availability and lead-time information.

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