MT48LC4M16A2P-7E IT:G

The MT48LC4M16A2P-7E IT:G is a 64‑Mbit synchronous DRAM (SDRAM) organized as 1M × 16 with four internal banks and a parallel memory interface. It implements fully synchronous, pipelined operation and supports PC133‑class clocking for system memory applications that require short access times and programmable burst transfers.

This device is offered in a 54‑pin TSOP II package and is specified for industrial temperature operation, making it suitable for board‑level integration where compact footprint, 3.3 V supply operation, and predictable SDRAM timing are required.

Key Features

• Memory Core & Organization 64 Mbit SDRAM organized as 4M × 16 with four internal banks (1M × 16 × 4 banks) to support banked access and optimized throughput.
• Performance PC133‑class synchronous operation with a 133 MHz clock frequency and a specified access time of 5.4 ns; internal pipelined operation allows column address changes every clock cycle.
• Programmable Burst & Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh, and Self Refresh modes with a 64 ms, 4,096‑cycle refresh scheme.
• Interface & Signaling Parallel memory interface with LVTTL‑compatible inputs and outputs and standard SDRAM control signals (CLK, CKE, CS#, BA0/BA1, address bus and DQ data lines).
• Timing & Cycle Characteristics Write cycle time (word/page) specified at 14 ns; part timing option reflects PC133 timing class (‑7E) appropriate for 7.5 ns clock‑to‑cycle timings.
• Power Single‑supply operation at nominal +3.3 V (range 3.0 V to 3.6 V), simplifying integration into 3.3 V systems.
• Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) package for compact board‑level mounting; industrial ambient temperature range –40 °C to +85 °C (TA).

Unique Advantages

• Banked SDRAM Architecture: Four internal banks enable overlapping row/column operations to help improve effective throughput for burst and sequential accesses.
• PC133‑Class Clocking: 133 MHz operation and SDRAM timing options support designs targeting higher‑frequency synchronous memory interfaces.
• Flexible Burst Modes and Auto‑Refresh: Multiple programmable burst lengths and built‑in refresh/auto‑precharge modes reduce controller overhead for repetitive access patterns.
• Industrial Temperature Rating: Specified operation from –40 °C to +85 °C for deployment in extended temperature environments.
• Compact TSOP II Footprint: 54‑pin TSOP II package provides a low‑profile option for board space‑constrained designs while keeping necessary SDRAM signals accessible.
• Standard 3.3 V Supply: +3.3 V nominal supply range (3.0 V–3.6 V) aligns with common system power rails to simplify power design.

Why Choose MT48LC4M16A2P-7E IT:G?

The MT48LC4M16A2P-7E IT:G delivers a compact, industrial‑rated SDRAM solution with PC133‑class synchronous performance, flexible burst modes, internal bank architecture and standard 3.3 V operation. Its 54‑pin TSOP II package and predictable SDRAM timing make it suitable for embedded and system designs that require a small footprint 64‑Mbit volatile memory with industrial temperature capability.

Engineers specifying this device will benefit from the combination of banked pipelined access, configurable burst lengths, on‑chip refresh modes and LVTTL‑compatible signaling to integrate the memory into synchronous parallel memory subsystems with established timing behavior.

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