MT48LC4M16A2P-75:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 95 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-75:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-75:G TR is a 64 Mbit synchronous DRAM (SDRAM) device organized as 4M × 16 with four internal banks and a parallel memory interface. It is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and operates from a 3.0 V to 3.6 V supply.
Designed for systems requiring PC66/PC100/PC133-compliant SDRAM timing, the device supports fully synchronous, pipelined operation with programmable burst lengths and auto/precharge/refresh options. Datasheet notes indicate this device is not recommended for new designs.
Key Features
- Memory Core 64 Mbit SDRAM organized as 4M × 16 with four internal banks and bank addressing via BA0/BA1.
- Timing and Performance PC66-, PC100-, and PC133-compliant; 133 MHz clock frequency and a listed access time of 5.4 ns. Internal pipelined operation allows column address changes each clock cycle.
- Burst and Refresh Programmable burst lengths of 1, 2, 4, 8 or full page, with Auto Precharge (including concurrent Auto Precharge), Auto Refresh, and standard and low-power Self Refresh modes. 4,096-cycle refresh (64 ms).
- Interface and I/O Fully synchronous with all signals registered on the positive edge of the system clock; LVTTL-compatible inputs and outputs.
- Power Single +3.3 V ±0.3 V power supply (specified operating range 3.0 V–3.6 V) and support for self-refresh low-power mode.
- Package and Temperature 54-pin TSOP II (400 mil) package, 10.16 mm width, with commercial operating temperature range 0 °C to +70 °C.
- Reliability and Compatibility Options and timing variants documented in the datasheet; device marking and timing options are defined (e.g., -75 timing).
Typical Applications
- System Memory Use as parallel SDRAM system memory where a 64 Mbit x16 SDRAM with PC133-compatible timing is required.
- Buffered Storage Suitable for designs that need pipelined, burst-capable parallel memory for intermediate buffering and data throughput.
- Legacy and Retrofit Designs Appropriate for maintaining or repairing equipment designed around 54-pin TSOP II parallel SDRAM packages and PC133 timing.
Unique Advantages
- Standards-compatible timing: PC66/PC100/PC133 compliance simplifies integration into systems that expect standard SDRAM timing.
- Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) enable tailoring transfers for throughput or latency needs.
- Banked, pipelined architecture: Four internal banks and internal pipelined operation help hide row access/precharge times and support column-address changes every clock cycle.
- Power management modes: Auto Refresh and both standard and low-power Self Refresh modes provide options for reducing power during idle periods.
- Footprint for existing designs: 54-pin TSOP II (400 mil) package matches designs using 10.16 mm width TSOP components for straightforward board-level replacement.
- Commercial temperature range: Specified for 0 °C to +70 °C operation to match typical commercial-grade applications.
Why Choose MT48LC4M16A2P-75:G TR?
This MT48LC4M16A2P-75:G TR SDRAM delivers a compact, standards-aligned 64 Mbit parallel memory option with PC133-capable timing, programmable burst operation, and multiple refresh/power modes. Its 54-pin TSOP II package and 3.0 V–3.6 V supply make it suitable for designs that require a parallel x16 SDRAM footprint and conventional 3.3 V system rails.
Engineers maintaining or upgrading equipment that relies on parallel SDRAM can rely on the device’s documented timing options, banked architecture, and self-refresh capabilities for predictable integration. Refer to the device datasheet for detailed timing and pin-assignment information; note that the datasheet indicates this device is not recommended for new designs.
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