MT48LC4M16A2P-75 L:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,053 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-75 L:G TR – 64 Mbit SDRAM, 54‑pin TSOP II
The MT48LC4M16A2P-75 L:G TR is a 64 Mbit synchronous DRAM device in a 54‑pin TSOP II package from Micron Technology Inc. It implements a 4M × 16 organization with four internal banks and a parallel memory interface for system memory functions.
Designed for synchronous operation with internal pipelining and programmable burst lengths, the device targets PC66/PC100/PC133-compliant systems and other applications that require a +3.3 V single-supply SDRAM with on-chip refresh and self-refresh capabilities. Key electrical and timing characteristics include a 133 MHz clock frequency and a 5.4 ns access time.
Key Features
- Memory Core 64 Mbit SDRAM organized as 4M × 16 with four internal banks (1M × 16 × 4 banks), providing standard DRAM array organization for parallel memory subsystems.
- Synchronous, Pipelined Operation Fully synchronous design with internal pipelined operation and column-address changes allowed every clock cycle, enabling predictable timing and burst accesses.
- Performance PC66-, PC100-, and PC133-compliant timing options with a maximum clock frequency of 133 MHz and an access time of 5.4 ns (part-specific timing indicated by -75 marking).
- Programmable Burst & Control Programmable burst lengths of 1, 2, 4, 8, or full page plus Auto Precharge and Concurrent Auto Precharge modes for flexible read/write sequencing.
- Refresh & Self-Refresh Supports Auto Refresh and Self Refresh modes, including standard and low-power self-refresh, with a 64 ms/4,096-cycle refresh requirement.
- Interface & I/O LVTTL-compatible inputs and outputs with a parallel memory interface; single +3.3 V ±0.3 V supply (documented supply range 3.0 V to 3.6 V).
- Timing & Cycle Write cycle time (word/page) documented at 15 ns for the specified part; timing options include CL and cycle-time variations as indicated by part marking.
- Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) package for compact board-level mounting and a commercial operating temperature range of 0 °C to +70 °C.
Typical Applications
- PC66/PC100/PC133-class memory subsystems — Use where PC-compliant SDRAM timing and synchronous operation are required.
- Board-level memory modules — Compact 54‑pin TSOP II package supports high-density board mounting for system memory implementations.
- Systems requiring on-chip refresh — Auto Refresh and Self Refresh modes simplify refresh management in system designs operating from a single +3.3 V supply.
Unique Advantages
- Synchronous pipelined architecture: Internal pipelined operation and registered inputs on the clock edge enable predictable burst accesses and consistent timing behavior.
- PC-compliant timing options: PC66, PC100, and PC133 timing compliance provides flexibility for designs targeting those clock-rate families.
- Flexible burst and precharge options: Programmable burst lengths and Auto/Concurrent Auto Precharge modes support a range of access patterns and simplify controller logic.
- On-chip refresh capability: Standard and low-power self-refresh modes with a 4,096-cycle refresh scheme reduce external refresh management requirements.
- Compact package and standard I/O: 54‑pin TSOP II package combined with LVTTL-compatible I/Os eases board-level integration in space-constrained designs.
- Single-supply operation: Documented operation from 3.0 V to 3.6 V (+3.3 V ±0.3 V) matches common system power rails for straightforward power design.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC4M16A2P-75 L:G TR provides a synchronous, pipelined SDRAM solution in a compact 54‑pin TSOP II package, offering PC-class timing options and built-in refresh modes for stable system memory operation. Its 4M × 16 organization and LVTTL-compatible I/Os make it suitable for board-level memory implementations that require a +3.3 V single-supply SDRAM with programmable burst behavior.
This device is appropriate for designers targeting PC66/PC100/PC133 timing families or systems that need predictable, synchronous DRAM performance across a commercial temperature range. The combination of package density, on-chip refresh, and standard supply voltage supports straightforward integration and long-term maintainability in applicable designs.
Request a quote or submit an RFQ to obtain pricing and availability information for the MT48LC4M16A2P-75 L:G TR.
