MT48LC4M16A2P-75:G

The MT48LC4M16A2P-75:G is a 64 Mbit synchronous DRAM device organized as 4M × 16 with a parallel memory interface. It implements fully synchronous SDRAM architecture with internal pipelined operation and multiple bank support to provide predictable, high-speed memory access for systems that require compact parallel DRAM.

Key Features

• Core / Memory Architecture 64 Mbit organized as 4M × 16 with four internal banks, enabling standard SDRAM row/column access and banked operation.
• Performance & Timing PC66/PC100/PC133-compliant with a 133 MHz clock frequency and specified access time of 5.4 ns; includes programmable burst lengths (1, 2, 4, 8, or full page) for flexible throughput tuning.
• Refresh and Power Modes Supports Auto Refresh, Concurrent Auto Precharge, and both standard and low-power Self Refresh modes; 64 ms refresh window with a 4,096-cycle refresh count.
• Interface & Signaling Fully synchronous operation with LVTTL-compatible inputs and outputs and a parallel memory interface for conventional SDRAM system integration.
• Voltage & Timing Options Single-supply operation at +3.3 V nominal (3.0 V to 3.6 V range) and write-cycle timing such as a 15 ns word/page write cycle time for predictable system timing.
• Package & Temperature Supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and specified for commercial operating temperatures from 0 °C to 70 °C (TA).

Unique Advantages

• Parallel 4M × 16 organization: One-meg × 16 banks provide a 64 Mbit footprint suitable for systems needing moderate-capacity parallel SDRAM.
• PC133-rated performance: 133 MHz clocking and a 5.4 ns access time enable high-speed synchronous operation consistent with PC66/PC100/PC133 timing classes.
• Flexible burst and refresh control: Programmable burst lengths plus Auto Refresh and Self Refresh modes allow designers to balance throughput and power behavior.
• Standard 3.3 V supply range: Operates from 3.0 V to 3.6 V, matching common +3.3 V system rails for straightforward power integration.
• Compact TSOP II footprint: 54-pin TSOP II package delivers a small board area for space-constrained applications while preserving parallel SDRAM pinout.

Why Choose MT48LC4M16A2P-75:G?

The MT48LC4M16A2P-75:G combines a conventional parallel SDRAM architecture with PC133-compatible timing and a compact 54-pin TSOP II package, offering a clear specification set for designs that require 64 Mbit of volatile synchronous DRAM. Its programmable burst lengths, internal bank structure, and standard refresh modes provide design flexibility for balancing throughput and power.

This device is suited for systems that need predictable, rackable parallel SDRAM behavior with a +3.3 V supply and commercial temperature range (0 °C to 70 °C). The defined timing and packaging make it straightforward to integrate into existing parallel SDRAM memory subsystems.

To request a quote or submit procurement details for the MT48LC4M16A2P-75:G, please contact sales with your required quantities and delivery timeline.