MT48LC4M16A2P-75 L:G
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 994 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-75 L:G – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-75 L:G is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel memory interface in a 54-pin TSOP II (400 mil, 10.16 mm width) package. It implements a fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clocked memory operation.
Key device characteristics include a 133 MHz clock capability, single-supply operation at nominal 3.3 V, and commercial operating temperature support (0°C to 70°C), making it suitable for systems that require a compact, parallel SDRAM component with standard refresh and self-refresh modes.
Key Features
- Memory Architecture 64 Mbit SDRAM organized as 4M × 16 with 4 internal banks for banked row/column access and hidden precharge.
- Synchronous, Pipelined Operation Fully synchronous design with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
- Performance and Timing Clock frequency 133 MHz and specified access/cycle timing (Access Time: 5.4 ns; Write Cycle Time Word/Page: 15 ns). Datasheet timing options include PC133 (-75) timing variants.
- Burst and Refresh Control Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh, and Self Refresh (standard and low power) with 64 ms, 4,096-cycle refresh behavior.
- Signal and Voltage Compatibility LVTTL-compatible inputs and outputs; single +3.3 V ±0.3 V supply (operation within 3.0 V to 3.6 V range).
- Package and Temperature Supplied in a 54-pin TSOP II (400 mil) package and rated for commercial temperature operation from 0°C to 70°C (TA).
Typical Applications
- Parallel SDRAM memory subsystems — Acts as a 64 Mbit parallel SDRAM component where compact TSOP II packaging and 16-bit data organization are required.
- Systems requiring synchronous, pipelined memory — Used in designs that leverage synchronous clocked operation, internal banking and pipelining for predictable access patterns.
- Environments needing standard refresh control — Suitable where Auto Refresh and Self Refresh modes (including low-power self-refresh) and 4,096-cycle refresh handling are required.
Unique Advantages
- Compact TSOP II footprint: The 54-pin TSOP II (400 mil, 10.16 mm width) package provides a small form factor for board-level integration.
- Flexible burst and addressing: Programmable burst lengths and internal bank architecture permit flexible column addressing and efficient data transfers.
- Synchronous, pipelined design: Positive-edge clocked operation and pipelining allow column address changes every clock cycle for predictable throughput.
- Integrated refresh and low-power options: Auto Refresh, Concurrent Auto Precharge, and standard/low-power Self Refresh modes support reliable data retention and power-managed operation.
- Standard supply and I/O compatibility: LVTTL-compatible I/O and single +3.3 V ±0.3 V supply simplify interface requirements with common system logic levels.
- Commercial temperature rating: Rated for 0°C to 70°C operation for deployment in commercial-grade electronic equipment.
Why Choose MT48LC4M16A2P-75 L:G?
The MT48LC4M16A2P-75 L:G provides a compact, parallel 64 Mbit SDRAM solution with synchronous, pipelined architecture and internal banking to support predictable memory access patterns. Its combination of 16-bit organization, programmable burst modes, and integrated refresh/self-refresh capabilities make it a practical choice for designs requiring a standard commercial-temperature SDRAM in a TSOP II package.
This device is suited to engineers and procurement teams specifying a 4M × 16 SDRAM with 133 MHz class timing, LVTTL I/O compatibility, and 3.3 V supply operation, offering straightforward integration into parallel memory subsystems where these verified specs are required.
To request pricing, availability, or technical lead-time information for MT48LC4M16A2P-75 L:G, submit a quote request or request a formal quote from our sales team.