MT48LC4M16A2P-7E:J
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,323 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E:J – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-7E:J is a 64 Mbit, parallel SDRAM device organized as 4M × 16 and supplied in a 54‑pin TSOP II package. It implements fully synchronous SDR SDRAM architecture with internal banks, programmable burst lengths and auto‑refresh/precharge functions.
Targeted for designs requiring compact, board‑mount DRAM, this device supports 133 MHz clocking and standard SDRAM features that simplify system memory timing and refresh management while operating from a 3.0 V–3.6 V supply.
Key Features
- Memory Type & Organization Volatile SDRAM organized as 4M × 16 for a total of 64 Mbit of memory capacity.
- Interface & Timing Parallel memory interface with PC100/PC133 compliance; specified for 133 MHz operation and the -7E timing grade (2‑2‑2 timing). Documented access time: 5.4 ns and write cycle time (word/page) of 14 ns.
- Synchronous, Pipelined Operation Fully synchronous design with all signals registered on the positive clock edge and internal pipelining that allows column address changes every clock cycle.
- Banking & Burst Control Internal bank architecture to hide row access/precharge and programmable burst lengths (1, 2, 4, 8 or full page) for flexible data transfer patterns.
- Refresh & Auto Functions Supports auto refresh and auto precharge modes plus standard and low‑power self‑refresh options documented in the device family specification.
- Power Single supply operation from 3.0 V to 3.6 V, compatible with standard 3.3 V system rails.
- Package & Mounting 54‑pin TSOP II (0.400" / 10.16 mm width) surface‑mount package, Supplier Device Package listed as 54‑TSOP II.
- Operating Temperature Commercial operating range: 0°C to +70°C (TA).
Typical Applications
- Embedded Systems Provides compact board‑level SDRAM for embedded controllers and equipment that require parallel DRAM for working memory and data buffering.
- Legacy/PC‑Class Designs Suitable for systems designed around PC100/PC133 SDRAM timing and parallel memory interfaces.
- Memory Expansion Modules Fits module designs or daughterboards that use a 54‑pin TSOP II footprint for DRAM population.
Unique Advantages
- Proven SDRAM Feature Set: Programmable burst lengths, internal banks and auto‑refresh/precharge modes reduce host CPU overhead for common memory operations.
- 133 MHz Operation (‑7E Grade): Timing grade and clocking capability aligned to 133 MHz system designs, supporting tighter CAS latency settings defined in the family specification.
- Compact TSOP II Package: 54‑pin TSOP II (0.400") provides a space‑efficient form factor for board‑level memory integration.
- Wide Supply Range: Operation across 3.0 V to 3.6 V allows compatibility with standard 3.3 V power rails and tolerance for supply variance.
- Commercial Temperature Rating: Rated for 0°C to +70°C operation for general commercial‑grade applications.
Why Choose MT48LC4M16A2P-7E:J?
The MT48LC4M16A2P-7E:J delivers a straightforward, board‑level SDRAM solution for designs needing 64 Mbit of parallel DRAM in a compact 54‑pin TSOP II package. Its fully synchronous operation, internal banking, programmable burst lengths and documented 133 MHz timing grade simplify memory subsystem design and timing management.
Manufactured by Micron Technology, Inc., the device suits commercial applications that require a conventional SDRAM footprint and functionality, offering predictable timing (including documented access and cycle times), refresh control and a standard supply range for integration into existing 3.3 V systems.
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