MT48LC4M16A2P-7E:J TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 835 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E:J TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-7E:J TR is a 64 Mbit synchronous DRAM (SDRAM) device manufactured by Micron Technology Inc., organized as 4M × 16 with a parallel memory interface. It delivers PC133-class performance with a 133 MHz clock frequency and is supplied in a compact 54-pin TSOP II (400 mil / 10.16 mm width) package.
This SDRAM is suited for system memory implementations that require a fully synchronous parallel DRAM in a small TSOP profile, operating from a single 3.0 V to 3.6 V supply and specified for commercial temperature range (0°C to 70°C).
Key Features
- Core / Architecture SDR SDRAM with fully synchronous operation; all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
- Memory Organization 64 Mbit capacity arranged as 4M × 16, providing parallel data organization for system memory arrays.
- Performance & Timing PC100- and PC133-compliant timing with a 133 MHz clock frequency. Product timing includes an access time of 5.4 ns and a word/page write cycle time of 14 ns.
- Burst & Bank Features Internal banks to hide row access and precharge; programmable burst lengths (1, 2, 4, 8, or full page) and support for auto precharge modes.
- Refresh & Power Management Auto refresh capability and self-refresh modes (standard and low power variants noted in datasheet options) for maintaining DRAM state during idle periods.
- Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs for system-level interfacing.
- Power Supply Operates from a single 3.3 V ±0.3 V supply (specified 3.0 V to 3.6 V).
- Package & Temperature 54-pin TSOP II (0.400" / 10.16 mm width) plastic package; commercial operating temperature range 0°C to 70°C.
Typical Applications
- Embedded Systems — Parallel SDRAM for system memory in compact embedded platforms that require a TSOP II footprint and PC133-class timing.
- Legacy and Upgrade Designs — Drop-in SDRAM option for designs using parallel SDRAM architectures with 3.3 V supply requirements.
- Industrial Electronics — Memory for commercial-temperature equipment where a 54-pin TSOP II package and standard refresh modes are suitable.
Unique Advantages
- PC133-Class Timing: 133 MHz clock frequency and PC100/PC133 compliance enable integration into systems targeting these timing standards.
- Compact TSOP II Package: 54-pin 400 mil TSOP II offers a small board footprint for space-constrained designs.
- Flexible Burst Modes: Programmable burst lengths and internal pipelining support efficient block transfers and predictable latency.
- Standard Power Envelope: Single 3.3 V supply simplifies power rail design and compatibility with common system voltages (3.0 V–3.6 V).
- Robust Refresh Controls: Auto refresh and self-refresh options maintain data integrity during normal and idle operation modes.
Why Choose MT48LC4M16A2P-7E:J TR?
The MT48LC4M16A2P-7E:J TR positions itself as a practical SDRAM choice for designs needing a 64 Mbit parallel memory with PC133-class timing in a compact TSOP II package. Its fully synchronous architecture, programmable burst lengths, and internal banking provide predictable performance for system memory tasks.
This device is appropriate for commercial-temperature applications that require 3.3 V supply operation and a 54-pin TSOP II form factor. As a Micron-manufactured SDRAM, it offers specification-driven characteristics suitable for engineers designing or maintaining parallel SDRAM memory subsystems.
Request a quote or contact sales for pricing, lead time, and availability of the MT48LC4M16A2P-7E:J TR.