MT48LC4M16A2P-7E:J TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 835 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2P-7E:J TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2P-7E:J TR is a 64 Mbit synchronous DRAM (SDRAM) device manufactured by Micron Technology Inc., organized as 4M × 16 with a parallel memory interface. It delivers PC133-class performance with a 133 MHz clock frequency and is supplied in a compact 54-pin TSOP II (400 mil / 10.16 mm width) package.

This SDRAM is suited for system memory implementations that require a fully synchronous parallel DRAM in a small TSOP profile, operating from a single 3.0 V to 3.6 V supply and specified for commercial temperature range (0°C to 70°C).

Key Features

  • Core / Architecture SDR SDRAM with fully synchronous operation; all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
  • Memory Organization 64 Mbit capacity arranged as 4M × 16, providing parallel data organization for system memory arrays.
  • Performance & Timing PC100- and PC133-compliant timing with a 133 MHz clock frequency. Product timing includes an access time of 5.4 ns and a word/page write cycle time of 14 ns.
  • Burst & Bank Features Internal banks to hide row access and precharge; programmable burst lengths (1, 2, 4, 8, or full page) and support for auto precharge modes.
  • Refresh & Power Management Auto refresh capability and self-refresh modes (standard and low power variants noted in datasheet options) for maintaining DRAM state during idle periods.
  • Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs for system-level interfacing.
  • Power Supply Operates from a single 3.3 V ±0.3 V supply (specified 3.0 V to 3.6 V).
  • Package & Temperature 54-pin TSOP II (0.400" / 10.16 mm width) plastic package; commercial operating temperature range 0°C to 70°C.

Typical Applications

  • Embedded Systems — Parallel SDRAM for system memory in compact embedded platforms that require a TSOP II footprint and PC133-class timing.
  • Legacy and Upgrade Designs — Drop-in SDRAM option for designs using parallel SDRAM architectures with 3.3 V supply requirements.
  • Industrial Electronics — Memory for commercial-temperature equipment where a 54-pin TSOP II package and standard refresh modes are suitable.

Unique Advantages

  • PC133-Class Timing: 133 MHz clock frequency and PC100/PC133 compliance enable integration into systems targeting these timing standards.
  • Compact TSOP II Package: 54-pin 400 mil TSOP II offers a small board footprint for space-constrained designs.
  • Flexible Burst Modes: Programmable burst lengths and internal pipelining support efficient block transfers and predictable latency.
  • Standard Power Envelope: Single 3.3 V supply simplifies power rail design and compatibility with common system voltages (3.0 V–3.6 V).
  • Robust Refresh Controls: Auto refresh and self-refresh options maintain data integrity during normal and idle operation modes.

Why Choose MT48LC4M16A2P-7E:J TR?

The MT48LC4M16A2P-7E:J TR positions itself as a practical SDRAM choice for designs needing a 64 Mbit parallel memory with PC133-class timing in a compact TSOP II package. Its fully synchronous architecture, programmable burst lengths, and internal banking provide predictable performance for system memory tasks.

This device is appropriate for commercial-temperature applications that require 3.3 V supply operation and a 54-pin TSOP II form factor. As a Micron-manufactured SDRAM, it offers specification-driven characteristics suitable for engineers designing or maintaining parallel SDRAM memory subsystems.

Request a quote or contact sales for pricing, lead time, and availability of the MT48LC4M16A2P-7E:J TR.

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