MT48LC4M16A2TG-75 L:G

The MT48LC4M16A2TG-75 L:G is a 64 Mbit synchronous DRAM device organized as 4M × 16 with a parallel memory interface. It implements fully synchronous operation with internal bank architecture and programmable burst lengths to support system designs that require parallel SDRAM memory in a compact 54‑pin TSOP II package.

This device targets designs requiring 3.3 V class supply operation (3.0 V to 3.6 V) with a commercial operating temperature range of 0°C to 70°C and timing options aligned with PC66/PC100/PC133 class specifications.

Key Features

• Core / Memory 64 Mbit DRAM organized as 4M × 16 with four internal banks, supporting parallel DRAM operation.
• Technology SDRAM architecture with fully synchronous operation; all signals are registered on the positive edge of the system clock.
• Performance & Timing Clock frequency up to 133 MHz. Access time listed as 5.4 ns and timing option for -75 (PC133) at 7.5 ns (CL = 3) per device marking.
• Burst & Access Modes Programmable burst lengths of 1, 2, 4, 8 or full page; pipelined operation allows column address changes every clock cycle. Supports Auto Precharge (including concurrent auto precharge) and Auto Refresh modes.
• Refresh & Reliability Supports standard and low power self‑refresh modes and a 64 ms, 4,096‑cycle refresh sequence.
• Interface & I/O LVTTL‑compatible inputs and outputs with a parallel memory interface and conventional SDRAM control signals (CLK, CKE, CS#, BAx, Axx, DQx, DQM).
• Power & Temperature Single +3.3 V ±0.3 V supply range (3.0 V to 3.6 V); commercial operating temperature 0°C to 70°C.
• Package 54‑pin TSOP II (0.400", 10.16 mm width) plastic package for board‑level mounting and compact form‑factor designs.

Typical Applications

• PC‑class SDRAM systems For designs targeting PC66, PC100 or PC133 timing classes that require 64 Mbit parallel SDRAM density and timing options such as -75 (PC133).
• Board‑level memory expansion Suited to PCBs that require a compact 54‑pin TSOP II parallel DRAM package at 3.3 V with standard commercial temperature range.
• Embedded parallel memory subsystems For embedded designs requiring synchronous DRAM with programmable burst lengths, internal banks and standard/low‑power self‑refresh support.

Unique Advantages

• Industry timing options: Includes PC66, PC100 and PC133 timing variants with a -75 marking for 7.5 ns (CL = 3), providing predictable timing options for legacy timing classes.
• Flexible burst and bank architecture: Programmable burst lengths and four internal banks enable efficient pipelined column access and rapid column switching every clock cycle.
• Synchronous, registered signals: Fully synchronous operation with all signals registered on the positive clock edge simplifies timing integration in synchronous systems.
• Compact TSOP II package: 54‑pin TSOP II (0.400", 10.16 mm) offers a small board footprint for designs constrained by PCB area.
• Standard supply and temperature window: Operates from 3.0 V to 3.6 V with a commercial temperature range of 0°C to 70°C for common board‑level applications.
• Self‑refresh options: Supports both standard and low‑power self‑refresh modes and includes a 64 ms, 4,096‑cycle refresh mechanism to maintain data integrity.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC4M16A2TG-75 L:G provides a compact, board‑level 64 Mbit SDRAM solution with fully synchronous operation, flexible burst and bank management, and timing options aligned with PC66/PC100/PC133 classes. Its 54‑pin TSOP II package and 3.3 V supply make it suitable for applications that require parallel SDRAM density in a small form factor within a commercial temperature envelope.

This device is appropriate for engineers designing or maintaining systems that rely on parallel SDRAM memory with defined timing and refresh behavior, offering predictable electrical and timing characteristics from a recognized DRAM family.

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