MT48LC4M16A2TG-75:G TR

The MT48LC4M16A2TG-75:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel SDRAM interface in a 54-pin TSOP II package. It implements fully synchronous operation with internal pipelining and banked architecture to support high-throughput, low-latency memory access patterns.

Designed for systems requiring PC133‑class SDRAM performance, this device operates from a 3.0 V to 3.6 V supply, supports programmable burst lengths and auto/self‑refresh modes, and is offered in a compact 54‑pin TSOP II (400 mil, 10.16 mm width) package for board-level integration at commercial temperature ranges.

Key Features

• Memory Core 64 Mbit SDRAM organized as 1M × 16 × 4 banks (4M × 16 logical organization) for parallel data transfers.
• Performance PC66/PC100/PC133‑compliant timing options with a listed clock frequency of 133 MHz and an access time entry of 5.4 ns; the -75 timing option corresponds to a 7.5 ns cycle time at CL = 3 per datasheet timing options.
• Internal Architecture Fully synchronous operation with internal pipelined operation, internal banks for hiding row access/precharge, and the ability to change column address every clock cycle.
• Burst & Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent Auto Precharge), Auto Refresh modes, and a 64 ms / 4,096‑cycle refresh scheme.
• Interface & I/O Parallel SDRAM interface with LVTTL‑compatible inputs and outputs and support for conventional DRAM control signals (CLK, CKE, CS#, BA0/BA1, A0–A11, DQ, DQM).
• Power Single‑supply operation at +3.3 V nominal (specified 3.0 V to 3.6 V) and standard/low power self‑refresh options documented in the datasheet.
• Package & Temperature 54‑pin TSOP II (400 mil, 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

• PC133‑class memory subsystems Systems requiring PC133‑compliant synchronous DRAM timing and parallel SDRAM interfaces.
• 3.3 V system memory Designs that operate from a 3.0 V to 3.6 V supply and require a 64 Mbit parallel DRAM device.
• Board‑level module integration PCB designs that need a compact 54‑pin TSOP II (400 mil) memory package for space-constrained layouts.

Unique Advantages

• PC133‑class timing options: Provides established timing selections including the -75 option (7.5 ns cycle at CL = 3) for compatibility with PC133 timing requirements.
• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning data transfer granularity to system access patterns.
• Banked, pipelined architecture: Internal banks and pipelined operation allow column address changes every clock cycle, improving effective throughput for sequential accesses.
• Comprehensive refresh and power modes: Auto Refresh, Auto Precharge (including concurrent Auto Precharge), and self‑refresh modes support data integrity with system power management.
• Compact, industry standard package: 54‑pin TSOP II (400 mil) package facilitates integration into existing board designs that require standard TSOP form factors.
• Vendor documentation: Detailed datasheet specifications and timing options are provided for design and timing validation.

Why Choose MT48LC4M16A2TG-75:G TR?

The MT48LC4M16A2TG-75:G TR offers a documented, PC133‑class synchronous DRAM solution in a 64 Mbit density with a parallel interface and a compact 54‑pin TSOP II package. Its banked, pipelined architecture, programmable burst modes, and standard power/refresh features make it suitable for designs that require established SDRAM timing and predictable board‑level integration.

This device is appropriate for designers and procurement teams specifying 3.3 V SDRAM memory at commercial temperature ranges who need clear datasheet guidance and defined timing options for system timing validation and layout implementation.

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