MT48LC4M16A2TG-7E:G TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 709 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2TG-7E:G TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2TG-7E:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with four internal banks and a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with programmable burst lengths and features designed for systems requiring PC66/PC100/PC133-compliant SDRAM in a compact 54-pin TSOP II package.

Key value comes from PC133-class performance (133 MHz), flexible burst and refresh modes, and a single +3.3 V supply option, making it suitable for commercial-temperature embedded and computing modules that need parallel SDRAM memory in a small form factor.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 4M × 16 with four internal banks for concurrent row access and improved throughput.
  • Synchronous, Pipelined Operation Fully synchronous design with internal pipelining; column address can be changed every clock cycle to support high-rate data access.
  • PC-Class Timing PC66, PC100 and PC133 compliance with clock support up to 133 MHz and an access time specified at 5.4 ns.
  • Burst and Refresh Modes Programmable burst lengths (1, 2, 4, 8 or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh and standard/low-power self-refresh modes with 4,096-cycle refresh and 64 ms refresh period.
  • Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for standard system integration.
  • Power Single supply operation at +3.3 V ±0.3 V (3.0–3.6 V) to match common system power rails; write cycle time (word/page) specified at 14 ns.
  • Package and Mounting 54-pin TSOP II (400 mil, 10.16 mm width) plastic package optimized for surface-mount assembly.
  • Operating Temperature Commercial operating range: 0°C to +70°C (TA).

Typical Applications

  • PC and legacy computing modules PC66/PC100/PC133 compliance supports integration into modules and designs targeting these timing classes.
  • Embedded systems requiring parallel SDRAM Provides 64 Mbit of volatile, parallel SDRAM in a compact 54-pin TSOP II package for space-constrained boards.
  • Commercial and industrial electronics (commercial range) Commercial temperature rating (0°C to +70°C) aligns with a wide range of commercial electronic equipment operating conditions.

Unique Advantages

  • Compact surface-mount package: 54-pin TSOP II (400 mil, 10.16 mm) reduces board area while providing parallel DRAM connectivity for legacy and embedded designs.
  • Synchronous, high-rate operation: PC133-class timing and internal pipelining enable column-address changes every clock cycle for sustained throughput.
  • Flexible burst and refresh control: Programmable burst lengths, Auto Precharge (including concurrent auto precharge), and self-refresh modes simplify memory sequencing and power management.
  • Standard 3.3 V supply: Single +3.3 V ±0.3 V operation (3.0–3.6 V) matches common system rails for straightforward integration.
  • Vendor-backed SDRAM technology: Micron-specified timing and electrical characteristics provide traceable device-level specifications for design validation.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC4M16A2TG-7E:G TR offers a verified Micron SDRAM solution when you need 64 Mbit of parallel, synchronous memory in a compact 54-pin TSOP II package. Its combination of PC-class timing (up to 133 MHz), pipelined operation, and flexible burst/refresh features makes it appropriate for designs that require predictable, synchronous DRAM behavior at commercial temperature ranges.

This device is well suited to engineers specifying parallel SDRAM for embedded or module-level memory expansion where form factor, 3.3 V compatibility, and PC66/100/133 timing alignment are key selection criteria.

If you need pricing, availability, or to request a formal quote for MT48LC4M16A2TG-7E:G TR, submit a quote request or contact sales to receive fast assistance and procurement details.

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