MT48LC4M32B2B5-6:G TR
| Part Description |
IC DRAM 128MBIT PAR 90VFBGA |
|---|---|
| Quantity | 677 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-VFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.5 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 90-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M32B2B5-6:G TR – IC DRAM 128MBIT PAR 90VFBGA
The MT48LC4M32B2B5-6:G TR is a 128 Mbit SDRAM device organized as 4M × 32 bits in a 90-VFBGA (8×13) package. It provides parallel DRAM memory with a 167 MHz clock frequency, 5.5 ns access time and a write cycle time (word/page) of 12 ns.
This device targets designs that require external parallel SDRAM memory operating from a 3.0 V to 3.6 V supply and within an ambient temperature range of 0°C to 70°C (TA).
Key Features
- Memory 128 Mbit SDRAM organized as 4M × 32 bits to support parallel memory architectures.
- Performance 167 MHz clock frequency and 5.5 ns access time with a 12 ns write cycle time (word/page) for defined timing characteristics.
- Interface Parallel memory interface for systems using external DRAM buses.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 90-VFBGA package (8×13) for compact board-level integration.
- Operating Conditions Specified operating ambient temperature range of 0°C to 70°C (TA).
Typical Applications
- Parallel memory expansion — Use as a 128 Mbit parallel SDRAM (4M × 32) for systems requiring external DRAM capacity.
- High-speed external DRAM — Employed where a 167 MHz clock and 5.5 ns access time meet system timing requirements.
- Embedded system memory — Suitable for embedded designs operating within a 3.0 V–3.6 V supply range and 0°C–70°C ambient temperature.
Unique Advantages
- Clear timing specifications: 5.5 ns access time and 12 ns write cycle time provide deterministic memory timing for system design.
- Parallel interface support: Native parallel memory interface simplifies integration with parallel DRAM controllers.
- Compact VFBGA footprint: 90-VFBGA (8×13) package reduces board area for higher density designs.
- Wide supply range: 3.0 V to 3.6 V operation accommodates common system power rails.
- Defined operating temperature: Rated for 0°C to 70°C (TA) ambient environments.
Why Choose MT48LC4M32B2B5-6:G TR?
The MT48LC4M32B2B5-6:G TR delivers a compact, parallel SDRAM option with defined performance characteristics (167 MHz clock, 5.5 ns access time, 12 ns write cycle time) and a 128 Mbit organization (4M × 32). Its 90-VFBGA (8×13) package and 3.0 V–3.6 V supply range make it suitable for designs that need external DRAM density in a small footprint.
This device is appropriate for engineers specifying parallel SDRAM with clear timing and supply requirements, offering straightforward integration into systems that operate within the listed ambient temperature and voltage ranges.
Request a quote or contact sales to discuss pricing, availability, and lead times for MT48LC4M32B2B5-6:G TR.
