MT48LC4M32B2B5-6A IT:L

IC DRAM 128MBIT PAR 90VFBGA
Part Description

IC DRAM 128MBIT PAR 90VFBGA

Quantity 1,145 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2B5-6A IT:L – IC DRAM 128MBIT PAR 90VFBGA

The MT48LC4M32B2B5-6A IT:L is a 128 Mbit parallel SDRAM organized as 4M × 32, supplied in a 90‑VFBGA (8×13) package. It operates with a clock frequency of 167 MHz, an access time of 5.4 ns and a supply range of 3.0 V to 3.6 V, making it suitable for systems requiring mid-density, parallel volatile memory.

Typical integration points include board‑level SDRAM subsystems where a 128 Mbit parallel memory with specified timing and thermal range is required.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32, volatile memory format for general-purpose parallel storage needs.
  • Performance Clock frequency of 167 MHz and an access time of 5.4 ns provide defined timing for system memory operations; write cycle time (word/page) is 12 ns.
  • Voltage Operates from 3.0 V to 3.6 V, supporting systems designed around a nominal 3.3 V supply domain.
  • Package 90‑VFBGA (8×13) ball grid array package for compact board-level integration.
  • Temperature Range Rated for operation from −40°C to 85°C (TA), covering common industrial temperature requirements.
  • Interface Parallel memory interface suitable for designs that require synchronous DRAM with standard parallel signaling.

Typical Applications

  • Parallel memory subsystems — Used where a 4M × 32 SDRAM is required for system memory expansion or buffering in board-level designs.
  • Embedded system memory — Provides volatile storage for embedded controllers and processing subsystems that accept a parallel SDRAM interface.
  • Industrial electronics — Applicable to equipment operating within the specified −40°C to 85°C temperature range and a 3.0–3.6 V supply domain.

Unique Advantages

  • Defined mid-density capacity — 128 Mbit (4M × 32) organization provides a specific density option for designs that require this capacity without overprovisioning.
  • Deterministic timing — 167 MHz clock rate with 5.4 ns access time and 12 ns write cycle time (word/page) allows predictable memory timing for system integration.
  • Wide operating voltage range — 3.0 V to 3.6 V accommodates common 3.3 V power rails used in many electronic systems.
  • Compact BGA package — 90‑VFBGA (8×13) package enables a high‑density board layout for space-constrained designs.
  • Industrial temperature support — −40°C to 85°C operating range supports deployment in environments with broader temperature variation.

Why Choose MT48LC4M32B2B5-6A IT:L?

The MT48LC4M32B2B5-6A IT:L provides a clear specification set—128 Mbit SDRAM, 4M × 32 organization, 167 MHz operation, and defined timing metrics—delivered in a compact 90‑VFBGA package. These attributes make it well suited to designs that need a predictable, mid-density parallel SDRAM solution with industrial temperature range and standard 3.0–3.6 V supply compatibility.

Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams selecting parallel SDRAM devices for board-level integration where the listed electrical, timing and thermal specifications are required.

Request a quote or contact sales to discuss availability, lead times and pricing for the MT48LC4M32B2B5-6A IT:L.

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