MT48LC4M32B2B5-6A AIT:L

The MT48LC4M32B2B5-6A AIT:L is a 128 Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a parallel memory interface in a 90-ball VFBGA package (8 × 13 mm). It provides synchronous, pipelined operation with programmable burst lengths and CAS latency options for predictable, clock-aligned memory access.

Designed for applications that require compact, automotive-grade SDRAM, the device combines 3.0–3.6 V supply operation, AEC-Q100 qualification, and an extended operating temperature range of –40 °C to +85 °C to address reliability and environmental demands.

Key Features

• Core Architecture 4M × 32 organization with four internal banks provides internal bank management and pipelined operation for efficient column access.
• Synchronous SDRAM Fully synchronous operation with all signals registered on the positive edge of the system clock; supports CAS latency (CL) 1, 2 and 3.
• Performance and Timing Clock frequency up to 167 MHz with 5.4 ns access time and a 12 ns write cycle time (word page), enabling deterministic read/write timing.
• Flexible Burst and Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge and auto refresh modes; 4K refresh count per refresh cycle as specified.
• Electrical Single-supply operation from 3.0 V to 3.6 V with LVTTL-compatible inputs and outputs for standard 3.3 V system integration.
• Package 90-ball VFBGA (8 mm × 13 mm) compact footprint for space-constrained board designs.
• Reliability and Temperature AEC-Q100 qualification and an operating temperature range of –40 °C to +85 °C (TA) for demanding environments.

Typical Applications

• Automotive systems Automotive-grade SDRAM for instrumentation, infotainment buffering, or other in-vehicle subsystems requiring AEC-Q100 qualification and extended temperature operation.
• Industrial embedded systems Deterministic synchronous memory for industrial controllers and embedded platforms operating across wide temperature ranges.
• Frame buffering and data buffering Parallel x32 organization and programmable burst lengths suit applications that require short-latency, high-throughput temporary storage.

Unique Advantages

• Automotive-qualified reliability: AEC-Q100 qualification and –40 °C to +85 °C operating range provide traceable qualification for harsh environments.
• Compact, high-density package: 90-ball VFBGA (8×13 mm) delivers 128 Mbit density in a small footprint to conserve PCB space.
• Predictable synchronous timing: Fully synchronous operation with CL options and 167 MHz clock support enables deterministic timing for system designs.
• Flexible burst and refresh modes: Programmable burst lengths, auto precharge and auto refresh support optimize throughput and simplify memory control.
• 3.3 V system compatibility: Single +3.3 V ±0.3 V supply and LVTTL-compatible I/Os ease integration into standard 3.3 V designs.

Why Choose IC DRAM 128MBIT PAR 90VFBGA?

The MT48LC4M32B2B5-6A AIT:L balances compact packaging, synchronous SDRAM performance, and automotive-grade qualification to serve designs that need reliable, clock-synchronous volatile memory in constrained spaces. Its 4M × 32 organization, programmable burst modes, and deterministic timing parameters make it suitable for buffering and temporary data storage where timing predictability and environmental robustness are required.

This device is appropriate for engineers and procurement teams building systems that demand AEC-Q100-qualified memory with standard 3.3 V operation and a small VFBGA footprint—providing a scalable, qualified memory option for automotive and industrial applications.

Request a quote or submit a pricing request to obtain availability and lead-time information for the MT48LC4M32B2B5-6A AIT:L.