MT48LC4M16A2TG-7E IT:G TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 438 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2TG-7E IT:G TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2TG-7E IT:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous operation with internal pipelined architecture and multiple internal banks to optimize row/column access performance.

Designed for systems that require PC133-speed SDRAM behavior and industrial temperature operation, this device provides programmable burst lengths, auto/precharge and refresh modes, and LVTTL‑compatible I/O for straightforward integration into parallel memory subsystems.

Key Features

  • Core / Architecture  Fully synchronous DRAM with internal pipelined operation and four internal banks to hide row access/precharge and support column address changes every clock cycle.
  • Memory Organization & Capacity  64 Mbit capacity organized as 4M × 16 with four banks (1M × 16 × 4 banks).
  • Performance  PC66-, PC100- and PC133-compliant timing options; specified clock frequency 133 MHz and access time 5.4 ns. Programmable burst lengths: 1, 2, 4, 8, or full page.
  • Data Integrity & Refresh  Auto Refresh, Concurrent Auto Precharge, Auto Precharge and Self Refresh modes with 64 ms / 4,096-cycle refresh support to maintain data in volatile memory.
  • Interface  Parallel memory interface with LVTTL-compatible inputs and outputs for direct system interfacing.
  • Power  Single +3.3 V ±0.3 V power supply (specified voltage range 3.0 V to 3.6 V) supporting standard SDRAM power domains.
  • Package & Mounting  54-pin TSOP II (400 mil / 10.16 mm width) surface-mount package for compact board-level memory implementation.
  • Operating Range  Industrial operating temperature range: −40 °C to +85 °C (TA), suitable for temperature‑sensitive applications.

Typical Applications

  • Industrial Embedded Systems  Memory expansion in industrial controllers and embedded devices benefiting from the −40 °C to +85 °C operating range.
  • Parallel SDRAM Subsystems  On‑board parallel DRAM for designs that require a 4M × 16 memory organization and PC133-compatible timing.
  • Legacy and Replacement Designs  Replacement or refurbishment of systems using 54‑pin TSOP II parallel SDRAM footprints and LVTTL signaling.

Unique Advantages

  • PC133‑class timing in a compact package: 133 MHz clock support and 5.4 ns access time combine performance with a 54‑pin TSOP II footprint.
  • Flexible burst and refresh control: Programmable burst lengths plus Auto/Concurrent Auto Precharge and Self Refresh modes simplify memory management and timing control.
  • Industrial temperature support: Rated for −40 °C to +85 °C (TA), enabling deployment in temperature‑sensitive environments.
  • Standard power domain: Operates from a single +3.3 V ±0.3 V supply (3.0 V to 3.6 V), matching common system rails.
  • LVTTL‑compatible I/O: Direct interfacing with LVTTL logic levels reduces interface translation requirements.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC4M16A2TG-7E IT:G TR positions itself as a straightforward, industry‑rated synchronous DRAM option for designs that require a 64 Mbit, 4M × 16 parallel memory with PC133 timing. Its combination of pipelined internal architecture, programmable burst modes, and standard 54‑pin TSOP II packaging supports integration into board‑level memory subsystems and industrial embedded applications.

Engineers specifying this device benefit from a familiar SDRAM feature set (auto/precharge, refresh and self refresh modes), LVTTL I/O compatibility, and a common +3.3 V power domain—providing a predictable, verifiable memory building block for systems with parallel SDRAM requirements.

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