MT48LC4M16A2TG-7E IT:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 438 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2TG-7E IT:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2TG-7E IT:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous operation with internal pipelined architecture and multiple internal banks to optimize row/column access performance.
Designed for systems that require PC133-speed SDRAM behavior and industrial temperature operation, this device provides programmable burst lengths, auto/precharge and refresh modes, and LVTTL‑compatible I/O for straightforward integration into parallel memory subsystems.
Key Features
- Core / Architecture Fully synchronous DRAM with internal pipelined operation and four internal banks to hide row access/precharge and support column address changes every clock cycle.
- Memory Organization & Capacity 64 Mbit capacity organized as 4M × 16 with four banks (1M × 16 × 4 banks).
- Performance PC66-, PC100- and PC133-compliant timing options; specified clock frequency 133 MHz and access time 5.4 ns. Programmable burst lengths: 1, 2, 4, 8, or full page.
- Data Integrity & Refresh Auto Refresh, Concurrent Auto Precharge, Auto Precharge and Self Refresh modes with 64 ms / 4,096-cycle refresh support to maintain data in volatile memory.
- Interface Parallel memory interface with LVTTL-compatible inputs and outputs for direct system interfacing.
- Power Single +3.3 V ±0.3 V power supply (specified voltage range 3.0 V to 3.6 V) supporting standard SDRAM power domains.
- Package & Mounting 54-pin TSOP II (400 mil / 10.16 mm width) surface-mount package for compact board-level memory implementation.
- Operating Range Industrial operating temperature range: −40 °C to +85 °C (TA), suitable for temperature‑sensitive applications.
Typical Applications
- Industrial Embedded Systems Memory expansion in industrial controllers and embedded devices benefiting from the −40 °C to +85 °C operating range.
- Parallel SDRAM Subsystems On‑board parallel DRAM for designs that require a 4M × 16 memory organization and PC133-compatible timing.
- Legacy and Replacement Designs Replacement or refurbishment of systems using 54‑pin TSOP II parallel SDRAM footprints and LVTTL signaling.
Unique Advantages
- PC133‑class timing in a compact package: 133 MHz clock support and 5.4 ns access time combine performance with a 54‑pin TSOP II footprint.
- Flexible burst and refresh control: Programmable burst lengths plus Auto/Concurrent Auto Precharge and Self Refresh modes simplify memory management and timing control.
- Industrial temperature support: Rated for −40 °C to +85 °C (TA), enabling deployment in temperature‑sensitive environments.
- Standard power domain: Operates from a single +3.3 V ±0.3 V supply (3.0 V to 3.6 V), matching common system rails.
- LVTTL‑compatible I/O: Direct interfacing with LVTTL logic levels reduces interface translation requirements.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC4M16A2TG-7E IT:G TR positions itself as a straightforward, industry‑rated synchronous DRAM option for designs that require a 64 Mbit, 4M × 16 parallel memory with PC133 timing. Its combination of pipelined internal architecture, programmable burst modes, and standard 54‑pin TSOP II packaging supports integration into board‑level memory subsystems and industrial embedded applications.
Engineers specifying this device benefit from a familiar SDRAM feature set (auto/precharge, refresh and self refresh modes), LVTTL I/O compatibility, and a common +3.3 V power domain—providing a predictable, verifiable memory building block for systems with parallel SDRAM requirements.
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