MT48LC4M16A2TG-75 L:G TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 362 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2TG-75 L:G TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2TG-75 L:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with four internal banks. It implements fully synchronous SDRAM architecture with pipelined operation and programmable burst lengths to support high-throughput parallel memory access.

Designed for systems requiring PC66/PC100/PC133-compliant synchronous DRAM operation, the device provides standard SDRAM functions including auto/precharge, auto refresh and self-refresh modes while operating from a single +3.3 V ±0.3 V supply.

Key Features

  • Core & Architecture Fully synchronous SDRAM with internal pipelined operation and four internal banks for hidden row access and precharge.
  • Memory Organization 64 Mbit density organized as 4M × 16 with bank addressing via BA0 and BA1.
  • Timing & Performance PC66/PC100/PC133-compliant operation with 133 MHz clock capability and cycle-time options including the -75 timing (7.5 ns @ CL = 3). Specified access time 5.4 ns and write cycle time (word/page) 15 ns.
  • Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full-page plus Auto Precharge (including concurrent) and Auto Refresh. 64 ms, 4,096-cycle refresh support.
  • Power & I/O Single +3.3 V ±0.3 V supply with LVTTL-compatible inputs and outputs; self-refresh modes available in standard and low-power options.
  • Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature 0°C to +70°C (TA).
  • Interface Parallel SDRAM interface suitable for systems using synchronous parallel memory buses.

Typical Applications

  • PC system memory (PC66/PC100/PC133) — Supports synchronous DRAM timing and burst modes for systems targeting PC66/PC100/PC133-compatible memory designs.
  • Embedded systems with parallel SDRAM — 4M × 16 organization and parallel interface provide deterministic block and burst transfers for embedded designs requiring synchronous DRAM.
  • Systems requiring self-refresh — Built-in self-refresh (standard and low-power) and auto-refresh support for designs that need retention during idle or low-power intervals.

Unique Advantages

  • Standard SDRAM timing compatibility — PC66/PC100/PC133 compliance and -75 timing option enable straightforward integration into systems using standard SDRAM clocking and latency profiles.
  • Flexible burst operation — Programmable burst lengths (1, 2, 4, 8 or full page) allow designers to optimize throughput and bus efficiency for varied access patterns.
  • Robust refresh management — Auto Refresh and 4,096-cycle refresh support simplify memory retention management and reduce host overhead.
  • Compact, industry-standard package — 54-pin TSOP II (400 mil) package offers a small-footprint solution for board-level integration with defined mechanical dimensions.
  • Single-supply LVTTL I/O — +3.3 V supply and LVTTL-compatible inputs/outputs enable compatibility with common logic voltage domains.
  • Low-power options — Self-refresh modes include low-power variants for designs that need reduced standby power.

Why Choose MT48LC4M16A2TG-75 L:G TR?

The MT48LC4M16A2TG-75 L:G TR provides a documented, standards-oriented SDRAM solution offering 64 Mbit density in a 4M × 16 organization with PC66/PC100/PC133 timing options. Its combination of pipelined synchronous architecture, programmable burst modes, and built-in refresh/self-refresh capabilities makes it a suitable choice for designs that require deterministic parallel SDRAM behavior and compatibility with established SDRAM timing profiles.

This device is appropriate for engineers specifying 3.3 V LVTTL-compatible synchronous DRAM in a 54-pin TSOP II package and for projects that rely on the documented features and timing options provided in the manufacturer's datasheet.

Request a quote or contact sales to inquire about availability, lead times, and pricing for MT48LC4M16A2TG-75 L:G TR. Note: the datasheet indicates certain options and includes the statement "Not recommended for new designs"—consult sales for suitability and current availability before specifying.

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