MT48LC4M16A2TG-75 L:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 362 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2TG-75 L:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2TG-75 L:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with four internal banks. It implements fully synchronous SDRAM architecture with pipelined operation and programmable burst lengths to support high-throughput parallel memory access.
Designed for systems requiring PC66/PC100/PC133-compliant synchronous DRAM operation, the device provides standard SDRAM functions including auto/precharge, auto refresh and self-refresh modes while operating from a single +3.3 V ±0.3 V supply.
Key Features
- Core & Architecture Fully synchronous SDRAM with internal pipelined operation and four internal banks for hidden row access and precharge.
- Memory Organization 64 Mbit density organized as 4M × 16 with bank addressing via BA0 and BA1.
- Timing & Performance PC66/PC100/PC133-compliant operation with 133 MHz clock capability and cycle-time options including the -75 timing (7.5 ns @ CL = 3). Specified access time 5.4 ns and write cycle time (word/page) 15 ns.
- Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full-page plus Auto Precharge (including concurrent) and Auto Refresh. 64 ms, 4,096-cycle refresh support.
- Power & I/O Single +3.3 V ±0.3 V supply with LVTTL-compatible inputs and outputs; self-refresh modes available in standard and low-power options.
- Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature 0°C to +70°C (TA).
- Interface Parallel SDRAM interface suitable for systems using synchronous parallel memory buses.
Typical Applications
- PC system memory (PC66/PC100/PC133) — Supports synchronous DRAM timing and burst modes for systems targeting PC66/PC100/PC133-compatible memory designs.
- Embedded systems with parallel SDRAM — 4M × 16 organization and parallel interface provide deterministic block and burst transfers for embedded designs requiring synchronous DRAM.
- Systems requiring self-refresh — Built-in self-refresh (standard and low-power) and auto-refresh support for designs that need retention during idle or low-power intervals.
Unique Advantages
- Standard SDRAM timing compatibility — PC66/PC100/PC133 compliance and -75 timing option enable straightforward integration into systems using standard SDRAM clocking and latency profiles.
- Flexible burst operation — Programmable burst lengths (1, 2, 4, 8 or full page) allow designers to optimize throughput and bus efficiency for varied access patterns.
- Robust refresh management — Auto Refresh and 4,096-cycle refresh support simplify memory retention management and reduce host overhead.
- Compact, industry-standard package — 54-pin TSOP II (400 mil) package offers a small-footprint solution for board-level integration with defined mechanical dimensions.
- Single-supply LVTTL I/O — +3.3 V supply and LVTTL-compatible inputs/outputs enable compatibility with common logic voltage domains.
- Low-power options — Self-refresh modes include low-power variants for designs that need reduced standby power.
Why Choose MT48LC4M16A2TG-75 L:G TR?
The MT48LC4M16A2TG-75 L:G TR provides a documented, standards-oriented SDRAM solution offering 64 Mbit density in a 4M × 16 organization with PC66/PC100/PC133 timing options. Its combination of pipelined synchronous architecture, programmable burst modes, and built-in refresh/self-refresh capabilities makes it a suitable choice for designs that require deterministic parallel SDRAM behavior and compatibility with established SDRAM timing profiles.
This device is appropriate for engineers specifying 3.3 V LVTTL-compatible synchronous DRAM in a 54-pin TSOP II package and for projects that rely on the documented features and timing options provided in the manufacturer's datasheet.
Request a quote or contact sales to inquire about availability, lead times, and pricing for MT48LC4M16A2TG-75 L:G TR. Note: the datasheet indicates certain options and includes the statement "Not recommended for new designs"—consult sales for suitability and current availability before specifying.