MT48LC4M16A2TG-6:G TR

The MT48LC4M16A2TG-6:G TR is a 64 Mbit synchronous DRAM device organized as 4M x 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clock-driven memory access.

This device is suited for designs that require compact board-level DRAM in a 54-TSOP (0.400", 10.16 mm width) footprint, offering 167 MHz clock capability and single-supply operation over a commercial temperature range.

Key Features

• Memory Architecture 64 Mbit SDRAM organized as 4M × 16 with four internal banks for bank interleaving and hidden row access/precharge.
• Synchronous, Pipelined Operation Fully synchronous device with all signals registered on the positive edge of the system clock and internal pipelining for column address changes every clock cycle.
• Performance Clock frequency up to 167 MHz and an access time of 5.5 ns (device timing -6), supporting fast read/write cycles.
• Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page) plus Auto Precharge, Concurrent Auto Precharge, Auto Refresh, and self-refresh modes; 64 ms, 4,096-cycle refresh.
• Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for standard parallel SDRAM system integration.
• Timing and Cycle Write cycle time (word/page) of 12 ns and timing options consistent with PC66/PC100/PC133-style SDRAM timing families as defined in the device datasheet.
• Power Single-supply operation at approximately +3.3 V (spec range 3.0 V to 3.6 V).
• Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to 70°C.

Typical Applications

• Parallel SDRAM Memory Modules Board-level memory implementations requiring a compact 54-pin TSOP II footprint and parallel SDRAM interface.
• Legacy System Upgrades Replacement or refurbishment of designs using 4M × 16 parallel SDRAM devices in TSOP packages.
• Embedded Systems with Parallel Memory Designs that need predictable, clock-synchronous DRAM behavior and programmable burst access within a commercial temperature range.

Unique Advantages

• Deterministic Synchronous Operation: All signals registered on the positive clock edge and internal pipelining enable consistent, clock-driven access patterns.
• Flexible Burst Control: Programmable burst lengths (including full-page) let designers optimize throughput and latency for different access patterns.
• Compact TSOP II Package: 54-pin TSOP II (0.400", 10.16 mm) package provides a small board footprint for space-constrained designs.
• Standard 3.3 V Supply: Single +3.3 V operation (3.0 V–3.6 V range) simplifies power rail requirements and integration with common system voltages.
• Built-in Refresh and Low-Power Modes: Auto Refresh and self-refresh modes (standard and low power) support data integrity with minimal host intervention.

Why Choose MT48LC4M16A2TG-6:G TR?

The MT48LC4M16A2TG-6:G TR provides a compact, fully synchronous 64 Mbit DRAM option with a parallel interface, suitable for designs that require predictable, pipelined SDRAM behavior in a 54-pin TSOP II package. Its combination of 4M × 16 organization, programmable burst lengths, and standard +3.3 V supply makes it a clear fit for systems that need board-level DRAM integration within commercial temperature ranges.

Backed by Micron documentation and datasheet-level features—such as internal banks, Auto Precharge/Auto Refresh, and LVTTL-compatible I/O—this device is appropriate for engineers specifying legacy parallel SDRAM or compact TSOP-based memory solutions.

Request a quote or submit an inquiry to obtain pricing, availability, and lead-time information for the MT48LC4M16A2TG-6:G TR.