MT48LC4M16A2P-7E:G TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 763 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2P-7E:G TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC4M16A2P-7E:G TR is a 64 Mbit synchronous DRAM device organized as 4M × 16 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture and is specified for commercial operating temperatures.

Designed for systems requiring PC66/PC100/PC133-compatible SDRAM operation, the device offers programmable burst lengths, internal banked operation and LVTTL-compatible I/O to support board-level memory expansion and legacy PC-class memory applications.

Key Features

  • Core and Timing  Fully synchronous SDRAM with all signals registered on the positive edge of the system clock; specified for PC66, PC100 and PC133 operation with a 133 MHz clock frequency and access time of 5.4 ns.
  • Memory Organization  64 Mbit total capacity organized as 4M × 16 with 4 internal banks to improve row access and precharge efficiency.
  • Burst and Access Modes  Programmable burst lengths of 1, 2, 4, 8 or full page; supports Auto Precharge (including Concurrent Auto Precharge) and Auto Refresh modes for flexible memory sequencing.
  • Refresh and Self-Refresh  4,096-cycle refresh with a 64 ms refresh interval; supports both standard and low-power self-refresh modes.
  • I/O and Signaling  LVTTL-compatible inputs and outputs for controller compatibility with common logic families.
  • Power  Single-supply operation at +3.3 V nominal with an allowed supply range of 3.0 V to 3.6 V.
  • Performance Parameters  Write cycle time (word/page) specified at 14 ns, supporting high-throughput parallel transfers in PC-class timing modes.
  • Package and Temperature  Supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and rated for commercial ambient operation from 0 °C to 70 °C.

Typical Applications

  • PC and legacy system memory  Use as on-board SDRAM for PC100/PC133-compatible designs and legacy memory subsystems requiring parallel SDRAM.
  • Board-level memory expansion  Ideal for adding synchronous parallel DRAM capacity on printed circuit boards where a 54-pin TSOP II footprint is required.
  • Commercial electronic equipment  Suitable for commercial-temperature systems needing a 64 Mbit SDRAM solution with standard self-refresh and auto-refresh support.

Unique Advantages

  • Synchronous, pipelined architecture: Internal pipelined operation and positive-edge clock registration enable predictable timing and column-level throughput.
  • Flexible burst and refresh control: Programmable burst lengths and multiple refresh/self-refresh modes allow tailoring of memory behavior to system timing and power needs.
  • PC-class compatibility: Compliance with PC66/PC100/PC133 timing profiles and 133 MHz clocking simplifies integration into systems designed around these standards.
  • Standard 3.3 V supply: Single +3.3 V supply range (3.0 V to 3.6 V) eases power-domain integration on conventional boards.
  • Compact TSOP II package: 54-pin 0.400" TSOP II package provides a dense, board-level footprint for space-constrained designs.
  • LVTTL-compatible I/O: Logic-level compatibility for straightforward interfacing to common memory controllers and system logic.

Why Choose MT48LC4M16A2P-7E:G TR?

The MT48LC4M16A2P-7E:G TR delivers a 64 Mbit, 4M × 16 SDRAM building block that aligns with PC66/PC100/PC133 timing and operates from a standard +3.3 V supply. Its banked, pipelined architecture, programmable burst lengths and comprehensive refresh/self-refresh options make it suitable for commercial systems and board-level memory expansion where synchronous parallel DRAM is required.

Backed by Micron Technology Inc., this device is a straightforward choice for designers needing a compact 54-pin TSOP II SDRAM solution with defined commercial-temperature operation and standardized LVTTL I/O.

Request a quote or submit an inquiry to obtain pricing and availability for the MT48LC4M16A2P-7E:G TR.

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