MT48LC4M16A2P-7E:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 763 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E:G TR – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-7E:G TR is a 64 Mbit synchronous DRAM device organized as 4M × 16 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture and is specified for commercial operating temperatures.
Designed for systems requiring PC66/PC100/PC133-compatible SDRAM operation, the device offers programmable burst lengths, internal banked operation and LVTTL-compatible I/O to support board-level memory expansion and legacy PC-class memory applications.
Key Features
- Core and Timing Fully synchronous SDRAM with all signals registered on the positive edge of the system clock; specified for PC66, PC100 and PC133 operation with a 133 MHz clock frequency and access time of 5.4 ns.
- Memory Organization 64 Mbit total capacity organized as 4M × 16 with 4 internal banks to improve row access and precharge efficiency.
- Burst and Access Modes Programmable burst lengths of 1, 2, 4, 8 or full page; supports Auto Precharge (including Concurrent Auto Precharge) and Auto Refresh modes for flexible memory sequencing.
- Refresh and Self-Refresh 4,096-cycle refresh with a 64 ms refresh interval; supports both standard and low-power self-refresh modes.
- I/O and Signaling LVTTL-compatible inputs and outputs for controller compatibility with common logic families.
- Power Single-supply operation at +3.3 V nominal with an allowed supply range of 3.0 V to 3.6 V.
- Performance Parameters Write cycle time (word/page) specified at 14 ns, supporting high-throughput parallel transfers in PC-class timing modes.
- Package and Temperature Supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and rated for commercial ambient operation from 0 °C to 70 °C.
Typical Applications
- PC and legacy system memory Use as on-board SDRAM for PC100/PC133-compatible designs and legacy memory subsystems requiring parallel SDRAM.
- Board-level memory expansion Ideal for adding synchronous parallel DRAM capacity on printed circuit boards where a 54-pin TSOP II footprint is required.
- Commercial electronic equipment Suitable for commercial-temperature systems needing a 64 Mbit SDRAM solution with standard self-refresh and auto-refresh support.
Unique Advantages
- Synchronous, pipelined architecture: Internal pipelined operation and positive-edge clock registration enable predictable timing and column-level throughput.
- Flexible burst and refresh control: Programmable burst lengths and multiple refresh/self-refresh modes allow tailoring of memory behavior to system timing and power needs.
- PC-class compatibility: Compliance with PC66/PC100/PC133 timing profiles and 133 MHz clocking simplifies integration into systems designed around these standards.
- Standard 3.3 V supply: Single +3.3 V supply range (3.0 V to 3.6 V) eases power-domain integration on conventional boards.
- Compact TSOP II package: 54-pin 0.400" TSOP II package provides a dense, board-level footprint for space-constrained designs.
- LVTTL-compatible I/O: Logic-level compatibility for straightforward interfacing to common memory controllers and system logic.
Why Choose MT48LC4M16A2P-7E:G TR?
The MT48LC4M16A2P-7E:G TR delivers a 64 Mbit, 4M × 16 SDRAM building block that aligns with PC66/PC100/PC133 timing and operates from a standard +3.3 V supply. Its banked, pipelined architecture, programmable burst lengths and comprehensive refresh/self-refresh options make it suitable for commercial systems and board-level memory expansion where synchronous parallel DRAM is required.
Backed by Micron Technology Inc., this device is a straightforward choice for designers needing a compact 54-pin TSOP II SDRAM solution with defined commercial-temperature operation and standardized LVTTL I/O.
Request a quote or submit an inquiry to obtain pricing and availability for the MT48LC4M16A2P-7E:G TR.