MT48LC4M32B2B5-6A:L TR

IC DRAM 128MBIT PAR 90VFBGA
Part Description

IC DRAM 128MBIT PAR 90VFBGA

Quantity 193 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2B5-6A:L TR – IC DRAM 128MBIT PAR 90VFBGA

The MT48LC4M32B2B5-6A:L TR is a 128 Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It is supplied in a 90-VFBGA (8×13) package and operates with a supply voltage range of 3.0 V to 3.6 V.

Designed for systems that require parallel SDRAM memory, this device delivers specified timing characteristics including a 167 MHz clock frequency, 5.4 ns access time and a 12 ns write cycle time for word/page operations within a 0 °C to 70 °C ambient range.

Key Features

  • Memory Architecture 128 Mbit SDRAM organized as 4M × 32 for parallel 32-bit data operation.
  • Performance Supports a 167 MHz clock frequency with a 5.4 ns access time and a 12 ns write cycle time (word/page) for deterministic timing behavior.
  • Power Operates from a 3.0 V to 3.6 V supply range consistent with standard 3 V SDRAM systems.
  • Package 90-VFBGA (8×13) package format for compact board-level footprint and ball-grid mounting.
  • Operating Range Specified for ambient operation from 0 °C to 70 °C (TA).
  • Memory Type & Interface Volatile DRAM with a parallel memory interface suitable for classic SDRAM system integration.

Typical Applications

  • Embedded memory subsystems — Use as parallel SDRAM in systems requiring 128 Mbit of volatile storage with 32-bit data organization.
  • Legacy parallel-memory platforms — Drop-in memory element for designs using parallel SDRAM interfaces and standard 3 V supply levels.
  • Evaluation and prototyping — Component for testing and validating SDRAM timing, access, and bus integration at 167 MHz clock rates.

Unique Advantages

  • 4M × 32 organization: Provides a 32-bit wide data path that aligns with 32-bit bus architectures for straightforward data-width integration.
  • 167 MHz clock support: Enables operation at a defined clock frequency for systems requiring this timing envelope.
  • Deterministic access and cycle timing: 5.4 ns access time and 12 ns write cycle time (word/page) support timing-sensitive memory operations.
  • Standard 3 V supply range: 3.0 V to 3.6 V operation matches common SDRAM supply rails for compatibility with 3 V systems.
  • Compact VFBGA package: 90-ball VFBGA (8×13) package offers a compact mounting option for space-constrained boards.

Why Choose IC DRAM 128MBIT PAR 90VFBGA?

The MT48LC4M32B2B5-6A:L TR provides a defined SDRAM solution combining 128 Mbit capacity, a 4M × 32 organization and specified performance parameters (167 MHz clock, 5.4 ns access time, 12 ns write cycle time) in a compact 90-VFBGA package. These characteristics make it suitable for system designs that require a parallel DRAM device with clear timing and supply specifications.

Backed by Micron Technology Inc., this device is appropriate for engineers and procurement teams building or maintaining systems that rely on parallel SDRAM memory, where adherence to specified electrical and timing parameters is required.

Request a quote or submit an inquiry to obtain pricing and availability for the MT48LC4M32B2B5-6A:L TR.

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