MT48LC4M32B2B5-7:G TR

IC DRAM 128MBIT PAR 90VFBGA
Part Description

IC DRAM 128MBIT PAR 90VFBGA

Quantity 703 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2B5-7:G TR – IC DRAM 128MBIT PAR 90VFBGA

The MT48LC4M32B2B5-7:G TR is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It delivers 143 MHz clock frequency operation, a 5.5 ns access time and a 14 ns write cycle time for systems that require fast, parallel DRAM storage.

Packaged in a compact 90‑VFBGA (8×13) and operating at a supply range of 3.0 V to 3.6 V with an ambient temperature rating of 0 °C to 70 °C, the device is intended for designs that need deterministic SDRAM performance in a small form factor.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32 providing parallel data paths for high-bandwidth short-term storage.
  • Performance Operates up to 143 MHz with a 5.5 ns access time and a 14 ns write cycle time (word page), supporting fast read/write cycles.
  • Power Specified supply voltage range of 3.0 V to 3.6 V to match common 3 V system rails.
  • Package 90‑VFBGA (8×13) ball‑grid array package for compact board-level integration.
  • Operating Conditions Ambient temperature range specified as 0 °C to 70 °C (TA).
  • Interface Parallel memory interface suitable for conventional SDRAM system architectures.

Typical Applications

  • Parallel memory for embedded designs — Provides 128 Mbit of SDRAM in a parallel interface for systems requiring external DRAM buffers.
  • On-board data buffering — Fast access time and 143 MHz clocking enable temporary data storage and buffering in digital systems.
  • Compact form-factor implementations — 90‑VFBGA packaging supports space-constrained PCBs where a small BGA footprint is required.

Unique Advantages

  • Deterministic access characteristics: 5.5 ns access time and 14 ns write cycle time provide predictable read/write latencies.
  • Sustained clock-rate support: 143 MHz operation enables higher throughput for parallel SDRAM interfaces.
  • Wide supply compatibility: 3.0 V to 3.6 V supply allows integration with common 3 V system rails.
  • Compact BGA package: 90‑VFBGA (8×13) reduces board area while retaining a 32‑bit data organization.
  • Clear operating envelope: Specified 0 °C to 70 °C ambient range simplifies thermal planning for standard commercial designs.

Why Choose MT48LC4M32B2B5-7:G TR?

The MT48LC4M32B2B5-7:G TR combines a 4M × 32 SDRAM organization with 143 MHz clock capability and low access latency to deliver reliable parallel DRAM performance in a compact 90‑VFBGA package. Its 3.0 V to 3.6 V supply range and defined 0 °C to 70 °C operating window make it suitable for commercial applications that require predictable memory timing and a small board footprint.

Manufactured by Micron Technology Inc., this 128 Mbit SDRAM is aimed at designers and procurement teams who need clearly specified performance and integration parameters for system memory subsystems.

Request a quote or submit an inquiry to obtain pricing, availability and lead-time information for the MT48LC4M32B2B5-7:G TR.

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