MT48LC4M32B2B5-7:G

IC DRAM 128MBIT PAR 90VFBGA
Part Description

IC DRAM 128MBIT PAR 90VFBGA

Quantity 1,242 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2B5-7:G – 128 Mbit SDRAM, 90‑VFBGA

The MT48LC4M32B2B5-7:G is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It is specified with a 143 MHz clock frequency and a 5.5 ns access time for synchronous parallel memory applications.

Packaged in a 90‑VFBGA (8×13) footprint, the device operates from 3.0 V to 3.6 V and is rated for ambient operation from 0°C to 70°C, making it suitable for systems requiring standard‑voltage SDRAM in a compact BGA package.

Key Features

  • Memory Architecture 128 Mbit density arranged as 4M × 32, providing a 32‑bit wide data organization for parallel memory buses.
  • Interface & Performance Parallel SDRAM interface with a 143 MHz clock frequency, 5.5 ns access time and a 14 ns write cycle time (word page) for synchronous memory operations.
  • Power Operates from a 3.0 V to 3.6 V supply voltage range to match standard 3 V SDRAM power rails.
  • Package 90‑VFBGA package (8×13) providing a compact ball grid array for board‑level integration.
  • Operating Conditions Specified ambient temperature range of 0°C to 70°C (TA).

Unique Advantages

  • 32‑bit Parallel Organization: Enables direct connection to 32‑bit parallel memory buses without additional width conversion.
  • Synchronous Performance: 143 MHz clocking and 5.5 ns access time support predictable, synchronous memory timing for parallel systems.
  • Compact BGA Footprint: The 90‑VFBGA (8×13) package reduces board area for high‑density layouts.
  • Standard Voltage Compatibility: 3.0–3.6 V supply range aligns with common 3 V SDRAM power domains.
  • Deterministic Write Timing: 14 ns write cycle time (word page) provides explicit timing for write operations.

Why Choose IC DRAM 128MBIT PAR 90VFBGA?

The MT48LC4M32B2B5-7:G positions itself as a straightforward, specification‑driven SDRAM option for designs that require a 128 Mbit, 32‑bit parallel memory solution in a compact 90‑VFBGA package. Its defined clock, access, and write timings make it suitable for systems where synchronous, parallel memory behavior and standard 3 V supply compatibility are required.

This device suits engineering teams and procurement seeking clear, verifiable SDRAM specifications—density, organization, timing, voltage range, package, and operating temperature—so designs can be validated against concrete electrical and thermal parameters.

Request a quote or submit an inquiry to receive pricing and availability information for the MT48LC4M32B2B5-7:G.

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