MT48LC4M32B2F5-6:G TR

IC DRAM 128MBIT PAR 90VFBGA
Part Description

IC DRAM 128MBIT PAR 90VFBGA

Quantity 888 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2F5-6:G TR – IC DRAM 128MBIT PAR 90VFBGA

The MT48LC4M32B2F5-6:G TR is a 128 Mbit volatile DRAM organized as 4M × 32, based on SDRAM technology with a parallel memory interface. It is provided in a 90-VFBGA (8x13) package and operates from a 3.0 V to 3.6 V supply.

This device is intended for designs that require a moderate-density parallel SDRAM solution with a 167 MHz clock capability and sub-6 ns access performance, suitable for systems that integrate discrete SDRAM components in compact board footprints.

Key Features

  • Memory Type & Technology  Volatile SDRAM organized as 4M × 32 (128 Mbit) with a parallel memory interface for direct connection to parallel memory controllers.
  • Performance  Supports a clock frequency of 167 MHz with an access time of 5.5 ns and a word/page write cycle time of 12 ns, enabling deterministic read/write timing for matched system designs.
  • Power  Operates from a supply voltage range of 3.0 V to 3.6 V.
  • Package & Mounting  Supplied in a 90-VFBGA (8x13) ball-grid array footprint to minimize PCB area while supporting surface-mount assembly.
  • Operating Conditions  Specified for an ambient operating temperature range of 0°C to 70°C (TA).

Typical Applications

  • Embedded memory subsystems  Used as 128 Mbit parallel SDRAM storage where a 4M × 32 organization and 167 MHz clocking meet system memory requirements.
  • Consumer and industrial electronics  Integrated into designs requiring compact BGA-mounted SDRAM modules operating at standard commercial temperature ranges.
  • Board-level memory expansion  Employed as a discrete parallel DRAM device to expand memory capacity on custom PCBs while conserving board area with the 90-VFBGA package.

Unique Advantages

  • Balanced density and organization: 128 Mbit capacity in a 4M × 32 organization provides byte-wide data paths suitable for parallel SDRAM interfaces.
  • Deterministic timing: 5.5 ns access time and 12 ns write cycle time support predictable memory timing for system design margins.
  • Compact BGA footprint: The 90-VFBGA (8x13) package reduces PCB area compared with larger-package alternatives.
  • Standard supply voltage: 3.0 V to 3.6 V supply range aligns with common system power rails for straightforward power design.
  • Commercial temperature rating: Specified 0°C to 70°C operating range for use in typical commercial environments.

Why Choose IC DRAM 128MBIT PAR 90VFBGA?

The MT48LC4M32B2F5-6:G TR positions itself as a straightforward parallel SDRAM building block combining 128 Mbit density, a 4M × 32 organization, 167 MHz clock support and fast access timing. Its 90-VFBGA package enables compact board-level integration while the 3.0 V–3.6 V supply and commercial temperature rating make it suitable for a range of standard electronic designs.

This device is well suited to engineers and procurement teams seeking a verifiable, specification-driven SDRAM component for systems that require moderate memory capacity, predictable timing, and a compact BGA footprint.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT48LC4M32B2F5-6:G TR.

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