MT48LC4M32B2P-6 IT:G

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 762 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2P-6 IT:G – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2P-6 IT:G is a 128 Mbit SDRAM device organized as 4M × 32 with a parallel memory interface in an 86-TSOP II package. It operates from 3.0 V to 3.6 V and supports a clock frequency of 167 MHz.

With a 5.5 ns access time, 12 ns write cycle time, and an operating temperature range of -40°C to 85°C, this volatile DRAM component is suited for designs that require a compact, parallel SDRAM memory element in a 86-TFSOP (0.400", 10.16 mm width) package.

Key Features

  • Core / Memory Architecture 128 Mbit SDRAM organized as 4M × 32, providing parallel DRAM memory format suitable for address/data multiplexing.
  • Timing & Performance Supports a clock frequency of 167 MHz with a 5.5 ns access time and a 12 ns write cycle time for predictable timing behavior.
  • Power Operates from 3.0 V to 3.6 V, matching common 3.3 V SDRAM power domains.
  • Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package for board-level integration.
  • Temperature Range Rated for operation from -40°C to 85°C (TA), addressing a broad ambient temperature envelope.
  • Memory Interface & Format Parallel memory interface in DRAM format; mounting type listed as volatile.

Typical Applications

  • Parallel memory subsystems — Acts as a 4M × 32 parallel SDRAM component where 128 Mbit volatile storage is required on the memory bus.
  • Buffer and working memory — Suitable where a 167 MHz clock and 5.5 ns access time support transient buffering or intermediate data storage.
  • Board-level integrations — Fits designs that require a compact 86-TSOP II package and a 3.0–3.6 V supply domain.

Unique Advantages

  • Compact TSOP II footprint: 86-TSOP II package (0.400", 10.16 mm width) simplifies placement in space-constrained PCB layouts.
  • Fast access timing: 5.5 ns access time and 12 ns write cycle time provide defined timing margins for system memory scheduling.
  • High-frequency operation: Supports a 167 MHz clock frequency for higher-rate parallel memory operations within its specified voltage range.
  • Wide operating temperature: -40°C to 85°C rating supports deployment across extended ambient conditions.
  • Standard supply compatibility: 3.0 V to 3.6 V operation aligns with common 3.3 V SDRAM power rails.

Why Choose MT48LC4M32B2P-6 IT:G?

The MT48LC4M32B2P-6 IT:G combines a 4M × 32 SDRAM organization, defined timing characteristics (5.5 ns access, 12 ns write cycle), and 167 MHz clock capability in an industry-standard 86-TSOP II package. These attributes make it appropriate for designs that require a compact, parallel 128 Mbit volatile memory element with specified electrical and thermal limits.

This device is suited for engineers specifying board-level DRAM where package dimensions, supply range (3.0–3.6 V), and operating temperature (-40°C to 85°C) are determinative criteria. Its documented timing and package details support predictable integration and validation in systems requiring parallel SDRAM memory.

Request a quote or submit a procurement inquiry for MT48LC4M32B2P-6 IT:G to obtain pricing, availability, and lead-time information.

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