MT48LC4M32B2P-6 IT:G
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 762 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M32B2P-6 IT:G – IC DRAM 128MBIT PAR 86TSOP II
The MT48LC4M32B2P-6 IT:G is a 128 Mbit SDRAM device organized as 4M × 32 with a parallel memory interface in an 86-TSOP II package. It operates from 3.0 V to 3.6 V and supports a clock frequency of 167 MHz.
With a 5.5 ns access time, 12 ns write cycle time, and an operating temperature range of -40°C to 85°C, this volatile DRAM component is suited for designs that require a compact, parallel SDRAM memory element in a 86-TFSOP (0.400", 10.16 mm width) package.
Key Features
- Core / Memory Architecture 128 Mbit SDRAM organized as 4M × 32, providing parallel DRAM memory format suitable for address/data multiplexing.
- Timing & Performance Supports a clock frequency of 167 MHz with a 5.5 ns access time and a 12 ns write cycle time for predictable timing behavior.
- Power Operates from 3.0 V to 3.6 V, matching common 3.3 V SDRAM power domains.
- Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package for board-level integration.
- Temperature Range Rated for operation from -40°C to 85°C (TA), addressing a broad ambient temperature envelope.
- Memory Interface & Format Parallel memory interface in DRAM format; mounting type listed as volatile.
Typical Applications
- Parallel memory subsystems — Acts as a 4M × 32 parallel SDRAM component where 128 Mbit volatile storage is required on the memory bus.
- Buffer and working memory — Suitable where a 167 MHz clock and 5.5 ns access time support transient buffering or intermediate data storage.
- Board-level integrations — Fits designs that require a compact 86-TSOP II package and a 3.0–3.6 V supply domain.
Unique Advantages
- Compact TSOP II footprint: 86-TSOP II package (0.400", 10.16 mm width) simplifies placement in space-constrained PCB layouts.
- Fast access timing: 5.5 ns access time and 12 ns write cycle time provide defined timing margins for system memory scheduling.
- High-frequency operation: Supports a 167 MHz clock frequency for higher-rate parallel memory operations within its specified voltage range.
- Wide operating temperature: -40°C to 85°C rating supports deployment across extended ambient conditions.
- Standard supply compatibility: 3.0 V to 3.6 V operation aligns with common 3.3 V SDRAM power rails.
Why Choose MT48LC4M32B2P-6 IT:G?
The MT48LC4M32B2P-6 IT:G combines a 4M × 32 SDRAM organization, defined timing characteristics (5.5 ns access, 12 ns write cycle), and 167 MHz clock capability in an industry-standard 86-TSOP II package. These attributes make it appropriate for designs that require a compact, parallel 128 Mbit volatile memory element with specified electrical and thermal limits.
This device is suited for engineers specifying board-level DRAM where package dimensions, supply range (3.0–3.6 V), and operating temperature (-40°C to 85°C) are determinative criteria. Its documented timing and package details support predictable integration and validation in systems requiring parallel SDRAM memory.
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