MT48LC4M32B2P-6A AAT:L TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 635 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2P-6A AAT:L TR – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2P-6A AAT:L TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths, providing predictable, clocked memory access.

Targeted for demanding temperature environments and system-level designs, this device offers automotive-grade qualification (AEC-Q100), a wide operating temperature range of -40°C to 105°C, and a standard 86‑pin TSOP II package for board-level integration.

Key Features

  • Core Architecture  Fully synchronous SDRAM with internal pipelined operation and multiple internal banks (1 Meg × 32 × 4 banks) for efficient row/column access management.
  • Memory Organization  128 Mbit capacity arranged as 4M × 32 with 4 banks, 4K row addressing (A0–A11) and 256 column addresses (A0–A7).
  • Timing & Performance  167 MHz clock frequency rating with typical access time of 5.4 ns and support for CAS latencies (CL) of 1, 2, and 3; write cycle time (word/page) specified at 12 ns.
  • Burst & Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge/auto refresh modes, and concurrent auto precharge support for flexible system designs.
  • Power & Signaling  Single-supply operation at +3.3 V (3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs for standard board-level signaling.
  • Package & Thermal  86‑pin TSOP II (400 mil / 10.16 mm width) package suitable for compact PCB layouts; operating temperature −40°C to 105°C (TA).
  • Qualification  AEC‑Q100 qualification and automotive grade designation included in device data for designs requiring recognized component-level qualification.
  • Refresh & Low-Power Modes  Auto refresh and self‑refresh modes supported (note: self‑refresh availability varies by device option as documented in the datasheet).

Typical Applications

  • Automotive Electronics  Memory buffer and working memory in automotive control modules and systems that require AEC‑Q100 qualified components and extended temperature range.
  • Industrial Embedded Systems  Board-level SDRAM for embedded controllers and data buffering where wide temperature operation and stable synchronous behavior are required.
  • Parallel Memory Subsystems  High-throughput parallel SDRAM interfaces in designs that use x32 memory organization and standard CAS/burst operations.

Unique Advantages

  • Automotive‑Grade Qualification: AEC‑Q100 qualification and −40°C to 105°C operating range support use in temperature-demanding applications.
  • Deterministic Synchronous Operation: Fully synchronous design with registered signals on the positive clock edge and internal pipelining for predictable timing and pipeline-friendly access.
  • Flexible Burst and Latency Options: Programmable burst lengths and support for CL = 1, 2, 3 allow tuning of access patterns to match system requirements.
  • Compact, Standard Package: 86‑pin TSOP II (400 mil) package provides a common, compact footprint for board-level memory integration.
  • Standard Power Signaling: Single +3.3 V supply (3.0–3.6 V) and LVTTL-compatible I/O simplify interfacing with common logic families.
  • Refresh and Low‑Power Modes: Auto refresh and self‑refresh support help manage refresh cycles and power states per system needs.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6A AAT:L TR combines synchronous, pipelined SDRAM architecture with automotive-grade qualification and a wide operating temperature range, making it well suited for embedded and automotive systems that require stable, clocked parallel memory. Its 4M × 32 organization, programmable burst lengths, and CAS latency options give designers flexibility to match memory behavior to application throughput needs.

With a standard 86‑pin TSOP II package and single‑supply LVTTL signaling, the device integrates into existing board designs while offering AEC‑Q100 qualification for applications requiring a recognized component reliability baseline. This makes it appropriate for engineers selecting a verified SDRAM device for long-term designs that demand predictable synchronous performance and board-level compatibility.

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