MT48LC4M32B2P-6A AAT:L TR
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 635 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M32B2P-6A AAT:L TR – IC DRAM 128MBIT PAR 86TSOP II
The MT48LC4M32B2P-6A AAT:L TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths, providing predictable, clocked memory access.
Targeted for demanding temperature environments and system-level designs, this device offers automotive-grade qualification (AEC-Q100), a wide operating temperature range of -40°C to 105°C, and a standard 86‑pin TSOP II package for board-level integration.
Key Features
- Core Architecture Fully synchronous SDRAM with internal pipelined operation and multiple internal banks (1 Meg × 32 × 4 banks) for efficient row/column access management.
- Memory Organization 128 Mbit capacity arranged as 4M × 32 with 4 banks, 4K row addressing (A0–A11) and 256 column addresses (A0–A7).
- Timing & Performance 167 MHz clock frequency rating with typical access time of 5.4 ns and support for CAS latencies (CL) of 1, 2, and 3; write cycle time (word/page) specified at 12 ns.
- Burst & Command Flexibility Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge/auto refresh modes, and concurrent auto precharge support for flexible system designs.
- Power & Signaling Single-supply operation at +3.3 V (3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs for standard board-level signaling.
- Package & Thermal 86‑pin TSOP II (400 mil / 10.16 mm width) package suitable for compact PCB layouts; operating temperature −40°C to 105°C (TA).
- Qualification AEC‑Q100 qualification and automotive grade designation included in device data for designs requiring recognized component-level qualification.
- Refresh & Low-Power Modes Auto refresh and self‑refresh modes supported (note: self‑refresh availability varies by device option as documented in the datasheet).
Typical Applications
- Automotive Electronics Memory buffer and working memory in automotive control modules and systems that require AEC‑Q100 qualified components and extended temperature range.
- Industrial Embedded Systems Board-level SDRAM for embedded controllers and data buffering where wide temperature operation and stable synchronous behavior are required.
- Parallel Memory Subsystems High-throughput parallel SDRAM interfaces in designs that use x32 memory organization and standard CAS/burst operations.
Unique Advantages
- Automotive‑Grade Qualification: AEC‑Q100 qualification and −40°C to 105°C operating range support use in temperature-demanding applications.
- Deterministic Synchronous Operation: Fully synchronous design with registered signals on the positive clock edge and internal pipelining for predictable timing and pipeline-friendly access.
- Flexible Burst and Latency Options: Programmable burst lengths and support for CL = 1, 2, 3 allow tuning of access patterns to match system requirements.
- Compact, Standard Package: 86‑pin TSOP II (400 mil) package provides a common, compact footprint for board-level memory integration.
- Standard Power Signaling: Single +3.3 V supply (3.0–3.6 V) and LVTTL-compatible I/O simplify interfacing with common logic families.
- Refresh and Low‑Power Modes: Auto refresh and self‑refresh support help manage refresh cycles and power states per system needs.
Why Choose IC DRAM 128MBIT PAR 86TSOP II?
The MT48LC4M32B2P-6A AAT:L TR combines synchronous, pipelined SDRAM architecture with automotive-grade qualification and a wide operating temperature range, making it well suited for embedded and automotive systems that require stable, clocked parallel memory. Its 4M × 32 organization, programmable burst lengths, and CAS latency options give designers flexibility to match memory behavior to application throughput needs.
With a standard 86‑pin TSOP II package and single‑supply LVTTL signaling, the device integrates into existing board designs while offering AEC‑Q100 qualification for applications requiring a recognized component reliability baseline. This makes it appropriate for engineers selecting a verified SDRAM device for long-term designs that demand predictable synchronous performance and board-level compatibility.
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