MT48LC4M32B2P-6A IT:L

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 1,427 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2P-6A IT:L – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2P-6A IT:L is a 128 Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It provides synchronous DRAM performance with a specified clock frequency of 167 MHz and an access time of 5.4 ns.

Packaged in an 86-TSOP II (86-TFSOP, 0.400" / 10.16 mm width) and operating over a -40°C to 85°C ambient range, this device is targeted at systems that require mid-density parallel SDRAM memory operating at standard 3.0–3.6 V supply levels.

Key Features

  • Memory Type  Volatile SDRAM organized as 4M × 32 for a total memory size of 128 Mbit.
  • Performance  Clock frequency 167 MHz with an access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
  • Interface  Parallel memory interface suitable for synchronous DRAM system architectures.
  • Power  Designed for a 3.0 V to 3.6 V supply range.
  • Package  86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) surface-mount package for board-level integration.
  • Operating Temperature  Specified ambient operating range of -40°C to 85°C (TA).
  • Manufacturer  Produced by Micron Technology Inc.

Typical Applications

  • Embedded memory subsystems  Used as parallel SDRAM storage where a 128 Mbit volatile memory component is required.
  • Board-level DRAM expansion  Integrated on PCBs that need a 4M × 32 SDRAM device in an 86-TSOP II package.
  • Industrial electronic systems  Applicable in systems that operate within the device’s -40°C to 85°C ambient temperature range and 3.0–3.6 V supply.

Unique Advantages

  • Clear memory density and organization: 128 Mbit capacity organized as 4M × 32 provides a defined memory footprint for system designers.
  • Defined timing performance: 167 MHz clock frequency and 5.4 ns access time offer predictable synchronous DRAM timing for system timing budgets.
  • Standard supply range: Operates from 3.0 V to 3.6 V, matching common SDRAM power rails.
  • Wide operating temperature window: Rated for -40°C to 85°C ambient operation to support a range of temperature environments.
  • Compact surface-mount package: 86-TSOP II (86-TFSOP) package provides a small board footprint for dense PCB layouts.
  • Vendor pedigree: Manufactured by Micron Technology Inc., providing traceable device sourcing.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6A IT:L positions itself as a straightforward 128 Mbit parallel SDRAM option offering defined timing (167 MHz clock, 5.4 ns access) and a common 3.0–3.6 V supply envelope. Its 4M × 32 organization and TSOP II packaging make it suitable for designers specifying a mid-density synchronous DRAM device for board-level integration.

This device is appropriate for engineers and procurement teams who require explicit, verifiable DRAM specifications—capacity, timing, voltage, temperature range, and package—backed by Micron Technology Inc.

Request a quote or submit a sales inquiry to evaluate MT48LC4M32B2P-6A IT:L for your design and procurement needs.

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