MT48LC4M32B2P-6A XIT:L

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 801 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0002

Overview of MT48LC4M32B2P-6A XIT:L – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2P-6A XIT:L is a 128 Mbit SDRAM device organized as 4M × 32 with a parallel memory interface. It provides key timing and electrical characteristics for systems that require a discrete parallel SDRAM in a compact 86‑TSOP II package.

Designed for applications that need predictable SDRAM timing, this device offers a 167 MHz clock frequency, 5.4 ns access time, and a supply voltage range of 3.0 V to 3.6 V, with an operating ambient range of -40°C to 85°C.

Key Features

  • Memory Core / Type SDRAM volatile memory organized as 4M × 32 for a total capacity of 128 Mbit.
  • Performance Clock frequency of 167 MHz, access time of 5.4 ns, and a write cycle time (word page) of 12 ns for deterministic timing characteristics.
  • Interface Parallel memory interface compatible with systems that require discrete SDRAM connectivity.
  • Power Supply voltage range from 3.0 V to 3.6 V to match 3 V class designs.
  • Package 86‑TSOP II (listed as 86‑TFSOP, 0.400", 10.16 mm width) surface-mount package for compact board-level integration.
  • Operating Temperature Ambient operating range of -40°C to 85°C (TA) for extended temperature deployment.

Unique Advantages

  • 32‑bit Data Organization: The 4M × 32 arrangement delivers a native 32‑bit data path within a 128 Mbit footprint, simplifying bus width alignment for parallel systems.
  • Predictable Timing: Specified access time (5.4 ns) and write cycle time (12 ns) provide defined timing parameters for system memory design and validation.
  • 3.0–3.6 V Compatibility: The device’s supply voltage range aligns with 3 V power rails used in many designs requiring SDRAM support.
  • Compact TSOP II Package: The 86‑pin TSOP II package (0.400", 10.16 mm width) enables higher memory density in space-constrained PCB layouts.
  • Extended Ambient Range: Rated for -40°C to 85°C (TA), enabling use in environments with wide temperature swings.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6A XIT:L positions itself as a straightforward, specification-driven SDRAM option for designs that require a 128 Mbit, 4M × 32 parallel memory device. Its combination of 167 MHz clocking, defined access and write timings, and a compact 86‑TSOP II package make it suitable for projects that need explicit SDRAM timing and form-factor characteristics.

This device is appropriate for engineers and procurement teams specifying discrete parallel SDRAM with a 3.0–3.6 V supply and an extended ambient operating range. Its clear electrical and mechanical parameters support predictable integration into existing memory subsystems and board layouts.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MT48LC4M32B2P-6A XIT:L.

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