MT48LC4M32B2P-6A AIT:L TR

The MT48LC4M32B2P-6A AIT:L TR is a 128 Mbit synchronous DRAM organized as 4M x 32 with four internal banks and a parallel memory interface. This volatile memory device implements synchronous SDRAM architecture with pipelined operation and programmable burst modes for clocked system environments.

Designed for environments requiring AEC‑Q100 qualification and wide operating temperatures, the device provides a 3.0–3.6 V supply window, up to 167 MHz clock operation, and an 86-pin TSOP II (400 mil) package for board-level integration.

Key Features

• Synchronous DRAM architecture  Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation and internal banks for row access/precharge management.
• Memory organization  128 Mbit capacity arranged as 4M × 32 with 4 banks (1M × 32 × 4), supporting 4K row addressing and 256 column addresses.
• Performance  Rated for up to 167 MHz clock frequency with an access time of 5.4 ns and write cycle time (word/page) of 12 ns; supports CAS latencies of 1, 2 and 3.
• Burst and mode flexibility  Programmable burst lengths (1, 2, 4, 8 or full page), selectable burst type and auto precharge/auto refresh modes for flexible data-transfer patterns.
• Power and signaling  Single +3.3 V nominal supply (3.0–3.6 V) with LVTTL-compatible inputs and outputs.
• Automotive-grade qualification  AEC‑Q100 qualified with an operating temperature range of −40 °C to +85 °C (TA).
• Package  86-pin TSOP II (400 mil, 10.16 mm width) supplier device package for standard surface-mount assembly.

Typical Applications

• Automotive systems  AEC‑Q100 qualification and extended temperature range make the device suitable for automotive electronic modules that require synchronous parallel DRAM.
• Industrial and commercial embedded systems  Parallel SDRAM for embedded controllers and systems requiring pipelined memory access and programmable burst operation.
• Board-level memory upgrades  86‑pin TSOP II package for integration into existing designs that use parallel SDRAM footprints and 3.3 V signaling.

Unique Advantages

• AEC‑Q100 qualified: Provides qualification pedigree for automotive applications, supporting reliability and supply-chain requirements in regulated environments.
• High-frequency operation: Up to 167 MHz clocking and low access time (5.4 ns) enable higher throughput in synchronous bus systems.
• Flexible burst and timing options: Programmable burst lengths and CAS latency selection (1–3) allow tuning for different transaction patterns and system timing.
• Standard 86‑TSOP II package: Compact 400 mil TSOP II package (10.16 mm width) supports surface-mount assembly and common board layouts.
• Wide supply and temperature window: 3.0–3.6 V supply range and −40 °C to +85 °C operating range support varied system power and thermal conditions.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6A AIT:L TR balances synchronous SDRAM performance with automotive-grade qualification and a board-friendly 86‑pin TSOP II package. Its 4M × 32 organization, internal banking, programmable burst modes and CAS latency options deliver predictable, clocked memory behavior for systems requiring parallel SDRAM.

This device is suited to designers and engineers specifying qualified SDRAM for automotive and industrial embedded designs that require a 3.3 V supply, up to 167 MHz operation, and a compact surface-mount package backed by Micron datasheet specification details.

Request a quote or contact sales to obtain pricing, availability and lead-time information for the MT48LC4M32B2P-6A AIT:L TR.