MT48LC4M32B2P-6A AIT:L
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 221 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M32B2P-6A AIT:L – IC DRAM 128Mbit Parallel 86‑TSOP II
The MT48LC4M32B2P-6A AIT:L is a 128 Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with four internal banks and a parallel memory interface. It implements a fully synchronous, pipelined architecture with programmable burst lengths and PC100 functionality, targeting embedded and automotive-qualified memory roles.
With AEC‑Q100 qualification, an automotive grade listing and an operating temperature range of −40°C to 85°C, this device is specified for designs that require robust, industry‑grade SDRAM in a compact 86‑pin TSOP II package.
Key Features
- Memory Core 128 Mbit SDRAM organized as 4M × 32 with 4 internal banks (1M × 32 × 4 banks).
- Synchronous, Pipelined Operation Fully synchronous operation with internal pipelining that allows column address changes each clock cycle and internal bank management to hide row access/precharge.
- Performance Rated for a clock frequency up to 167 MHz with an access time of 5.4 ns and write cycle time (word page) of 12 ns; supports CAS latencies CL = 1, 2, and 3.
- Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page, with auto precharge, concurrent auto precharge and auto refresh modes; automotive refresh timing supported per datasheet.
- Voltage & I/O Single +3.3 V supply range specified at 3.0 V to 3.6 V; LVTTL‑compatible inputs and outputs.
- Qualification & Grade AEC‑Q100 qualified and listed as Automotive grade in the product specification.
- Package & Mounting 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) surface‑mount package; parallel memory interface.
- Temperature Range Operating ambient temperature range of −40°C to 85°C (TA).
Typical Applications
- Automotive electronic systems AEC‑Q100 qualification and automotive grade listing make this SDRAM suitable for in‑vehicle modules that require qualified synchronous memory.
- Embedded and industrial controllers Compact TSOP II package and synchronous buffering capabilities for embedded systems requiring deterministic memory timing.
- PC100/legacy embedded computing PC100 functionality and standard SDRAM feature set for legacy platform designs and systems using parallel SDRAM interfaces.
Unique Advantages
- Automotive‑grade qualification: AEC‑Q100 qualification and automotive grade listing provide documented supplier qualification for designs with automotive requirements.
- Synchronous pipelined architecture: Internal pipelining and banked organization enable column changes each clock cycle and improved throughput for burst access patterns.
- Flexible burst and refresh modes: Programmable burst lengths plus auto and concurrent auto precharge/refresh modes simplify memory control in system firmware.
- Compact board footprint: 86‑pin TSOP II package (0.400", 10.16 mm) offers a small‑package implementation for space‑constrained PCBs.
- Wide operating voltage range: 3.0 V to 3.6 V tolerance around the nominal 3.3 V supply supports common system power rails.
Why Choose MT48LC4M32B2P-6A AIT:L?
The MT48LC4M32B2P-6A AIT:L combines a standard SDRAM feature set—programmable burst lengths, pipelined operation and PC100 compatibility—with automotive qualification (AEC‑Q100) and a compact 86‑TSOP II package. Its 4M × 32 organization, four internal banks and support for multiple CAS latencies provide designers with flexible, deterministic memory performance in environments specified between −40°C and 85°C.
This device is well suited for engineers specifying qualified SDRAM for automotive modules, embedded controllers and legacy parallel‑SDRAM systems where package density, qualified supply chain and predictable timing are important design priorities.
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