MT48LC4M32B2P-6:G

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 901 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2P-6:G – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2P-6:G is a 128 Mbit volatile memory device implemented as SDRAM with a 4M × 32 organization and a parallel memory interface. It provides defined timing and electrical characteristics for designs that require discrete parallel SDRAM components in an 86-TSOP II package.

Key design attributes include a 167 MHz clock frequency, a 3.0–3.6 V supply range, and a commercial operating temperature range of 0°C to 70°C (TA), making the device suitable for standard embedded and electronic systems that specify these parameters.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32 for word-aligned parallel data access.
  • Performance Supports a 167 MHz clock frequency with an access time of 5.5 ns and a write cycle time (word/page) of 12 ns, providing defined timing for system memory operations.
  • Power Operates from a 3.0 V to 3.6 V supply range, compatible with common 3 V system rails.
  • Interface Parallel memory interface for direct integration into systems expecting parallel SDRAM signaling.
  • Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package for surface-mount PCB assembly.
  • Temperature Range Rated for operation from 0°C to 70°C (TA), suitable for commercial-temperature applications.

Unique Advantages

  • 128 Mbit Density: Provides a mid-range memory capacity (128 Mbit) in a single-device solution to meet moderate memory requirements without additional components.
  • Defined Timing Characteristics: Specified access time (5.5 ns) and write cycle time (12 ns) allow predictable integration and timing budgeting in system designs.
  • Wide 3.0–3.6 V Supply Range: Matches common 3 V supply rails for straightforward power system integration.
  • Standard 86-TSOP II Package: Compact 86-TFSOP package (0.400", 10.16 mm width) supports surface-mount assembly and standard PCB layout practices.
  • Parallel Interface: Parallel memory interface enables direct connection to controllers and systems requiring parallel SDRAM topology.
  • Commercial Temperature Rating: 0°C to 70°C operating range aligns with commercial embedded system requirements.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6:G positions itself as a straightforward parallel SDRAM component offering explicit electrical and timing specifications—128 Mbit capacity, 4M × 32 organization, 167 MHz clock, and defined access/write timings—packaged in an industry-standard 86-TSOP II footprint. These attributes make it suitable for designs that require a discrete SDRAM device with clear integration parameters.

This device is well suited to engineers and procurement teams specifying commercial-temperature SDRAM with a 3.0–3.6 V supply and parallel interface. Its documented timings, package, and voltage range provide predictable implementation and supply-chain clarity for integration into systems with matching requirements.

Request a quote or contact sales to inquire about pricing, availability, and lead times for the MT48LC4M32B2P-6:G.

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