MT48LC4M32B2P-6:G TR

The MT48LC4M32B2P-6:G TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 4M × 32 with a parallel memory interface. It delivers synchronous, word/page access with a clock frequency of up to 167 MHz and timing characteristics that support 5.5 ns access and 12 ns write cycle time (word/page).

Packaged in an 86‑TSOP II (0.400", 10.16 mm width) footprint and operating from 3.0 V to 3.6 V over a 0 °C to 70 °C ambient range, this device is intended for designs that require a compact, parallel SDRAM memory solution with defined performance and timing.

Key Features

• Memory Architecture Organized as 4M × 32 providing a total memory capacity of 128 Mbit suitable for parallel data word widths.
• SDRAM Core Synchronous DRAM technology with a parallel memory interface for deterministic, clocked data transfers.
• Performance & Timing Operates up to a 167 MHz clock frequency with an access time of 5.5 ns and a write cycle time (word/page) of 12 ns.
• Power Single supply range from 3.0 V to 3.6 V to match common 3 V system rails.
• Package Available in an 86‑TSOP II (0.400", 10.16 mm width) package for board-level integration where this TSOP form factor is required.
• Operating Temperature Specified for ambient use from 0 °C to 70 °C (TA).
• Device Type Volatile DRAM memory suitable for applications requiring temporary, high-speed parallel storage.

Typical Applications

• Board-level parallel memory — Provides 128 Mbit of SDRAM in a 4M × 32 organization for designs using parallel memory buses.
• Embedded systems requiring synchronous DRAM — Supports synchronous, clock-driven access up to 167 MHz for embedded modules and controllers.
• Compact form-factor designs — 86‑TSOP II package fits board layouts that require a thin TSOP footprint and a 10.16 mm width.

Unique Advantages

• Parallel SDRAM organization: 4M × 32 configuration provides a wide data path that simplifies integration with parallel bus architectures.
• Deterministic timing: 5.5 ns access time and 12 ns write cycle time (word/page) enable predictable memory performance for timing-sensitive designs.
• High-frequency operation: Rated for 167 MHz clock frequency to support higher-throughput synchronous transactions.
• Standard 3 V supply range: Operates from 3.0 V to 3.6 V for compatibility with common system power rails.
• Compact TSOP package: 86‑TSOP II (0.400", 10.16 mm) package provides a space-efficient option for board-level placement.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-6:G TR combines a 128 Mbit SDRAM capacity with a 4M × 32 organization and parallel synchronous interface to deliver predictable, clocked memory performance up to 167 MHz. Its defined timing (5.5 ns access, 12 ns write cycle) and 3.0–3.6 V supply range make it appropriate for systems that require compact, board-mounted volatile memory with specified electrical and timing characteristics.

Manufactured by Micron Technology Inc., this device is suitable for engineers and procurement teams looking for a compact TSOP-packaged SDRAM option with clear electrical and timing specifications for integration into parallel-interface designs operating within a 0 °C to 70 °C ambient range.

Request a quote or submit an RFQ to receive pricing and lead-time information for the MT48LC4M32B2P-6:G TR.