MT48LC4M32B2F5-6:G

The MT48LC4M32B2F5-6:G is a 128 Mbit volatile DRAM device implemented as SDRAM with a 4M × 32 memory organization and a parallel memory interface. It is supplied in a 90‑VFBGA (8×13) package and is specified for operation from 0°C to 70°C with a supply voltage range of 3.0 V to 3.6 V.

Designed for systems that require parallel SDRAM memory, the device delivers defined timing parameters including a 167 MHz clock frequency, 5.5 ns access time and a 12 ns write cycle time, offering predictable performance for embedded and memory‑buffering applications.

Key Features

• Core / Technology SDRAM architecture; volatile memory implemented as 4M × 32 organization for parallel access.
• Memory Capacity 128 Mbit total density presented in a 4M × 32 format.
• Performance Clock frequency up to 167 MHz with an access time of 5.5 ns and a write cycle time (word/page) of 12 ns for timing‑sensitive applications.
• Interface Parallel memory interface for direct connection to parallel memory subsystems.
• Power Supply voltage range 3.0 V to 3.6 V to match common 3 V SDRAM power rails.
• Package & Mounting 90‑VFBGA package (8×13) for surface‑mount integration and compact board footprint.
• Operating Conditions Industrial‑style ambient range specified from 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems — Used where a parallel SDRAM device is required for direct memory interfacing and data buffering.
• Embedded system memory — Suitable for embedded designs that need a 128 Mbit volatile SDRAM resource with defined timing characteristics.
• Memory expansion modules — Employed as a discrete SDRAM component on memory expansion or daughterboard implementations.

Unique Advantages

• Defined SDRAM timing: Access time of 5.5 ns and 12 ns write cycle time provide explicit timing parameters for system timing analysis.
• Parallel interface: 4M × 32 organization supports wide parallel data paths for straightforward integration into parallel memory buses.
• Compact BGA package: 90‑VFBGA (8×13) enables high‑density placement and surface‑mount assembly.
• Standard 3 V supply range: Operates from 3.0 V to 3.6 V to align with common SDRAM power rails.
• Manufacturer identification: Supplied by Micron Technology Inc., enabling access to manufacturer documentation and datasheet references.

Why Choose IC DRAM 128MBIT PAR 90VFBGA?

The MT48LC4M32B2F5-6:G positions itself as a straightforward, specification‑driven SDRAM device for designs that require a 128 Mbit parallel memory element. Its documented timing (167 MHz clock, 5.5 ns access, 12 ns write cycle), voltage range, and 90‑VFBGA packaging make it suitable for systems that need predictable SDRAM performance in a compact package.

This device is appropriate for engineers and procurement teams building or stocking hardware that depends on a discrete parallel SDRAM from a known manufacturer. The explicit electrical and thermal specifications support system design, timing validation, and long‑term component selection.

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