MT48LC8M16A2B4-6A AIT:L TR
| Part Description |
IC DRAM 128MBIT PAR 54VFBGA |
|---|---|
| Quantity | 1,025 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2B4-6A AIT:L TR – IC DRAM 128MBIT PAR 54VFBGA
The MT48LC8M16A2B4-6A AIT:L TR is a 128 Mbit volatile SDRAM device organized as 8M × 16 with a parallel memory interface in a 54‑VFBGA (8×8) package. It provides defined timing characteristics with a 167 MHz clock frequency, 5.4 ns access time, and a 12 ns write cycle time (word page).
Designed and qualified for automotive use (AEC‑Q100), the device supports operation from −40°C to 85°C and a supply voltage range of 3.0 V to 3.6 V, making it suitable for designs that require an automotive‑grade parallel SDRAM solution with compact packaging and predictable timing.
Key Features
- Memory Architecture 128 Mbit SDRAM organized as 8M × 16, providing parallel DRAM storage for system memory needs.
- Performance Operates at a 167 MHz clock frequency with a 5.4 ns access time and a 12 ns write cycle time (word page) for deterministic memory timing.
- Interface Parallel memory interface for direct integration into parallel‑bus designs.
- Voltage Nominal supply range of 3.0 V to 3.6 V to match common system power rails.
- Automotive Qualification AEC‑Q100 qualified and specified with an automotive grade, supporting deployment in automotive electronic assemblies.
- Package & Mounting 54‑VFBGA (8×8) package case optimized for surface‑mount assembly and compact board footprints.
- Operating Temperature Specified operating range from −40°C to 85°C (TA) for temperature‑varied environments.
Typical Applications
- Automotive electronic modules AEC‑Q100 qualification and automotive grade make this device suitable for memory functions in vehicle electronic control units and modules.
- Parallel‑bus embedded systems Used where a parallel SDRAM interface and defined access timing are required for system memory or buffering.
- Deterministic buffering tasks Applicable in designs that rely on specific access and write cycle times for predictable data handling.
Unique Advantages
- AEC‑Q100 qualification: Provides explicit automotive qualification for designs requiring certified components.
- Compact VFBGA package (8×8): 54‑ball VFBGA reduces board area while supporting surface‑mount assembly.
- Defined timing performance: 167 MHz clock, 5.4 ns access time, and 12 ns write cycle time enable predictable memory behavior.
- Wide operating temperature: −40°C to 85°C rating supports use across typical automotive and industrial ambient conditions.
- Standard supply range: 3.0–3.6 V compatibility with common system power rails simplifies power design.
- Parallel interface: Direct integration into legacy or dedicated parallel memory buses without requiring serial conversion.
Why Choose IC DRAM 128MBIT PAR 54VFBGA?
The MT48LC8M16A2B4-6A AIT:L TR positions itself as a focused SDRAM solution where automotive qualification, compact packaging, and deterministic timing are required. Its 8M × 16 organization and parallel interface make it straightforward to integrate into systems that rely on parallel DRAM, while the AEC‑Q100 qualification and −40°C to 85°C operating range support deployment in automotive environments.
This device is suited for designers and procurement teams specifying automotive‑grade DRAM with clear timing parameters and a standard 3.0–3.6 V supply. Its compact 54‑VFBGA package and defined electrical characteristics offer a balanced option for space‑constrained designs that require qualified, predictable memory behavior.
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