MT48LC8M16A2B4-6A:L TR
| Part Description |
IC DRAM 128MBIT PAR 54VFBGA |
|---|---|
| Quantity | 817 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2B4-6A:L TR – IC DRAM 128MBIT PAR 54VFBGA
The MT48LC8M16A2B4-6A:L TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface in a 54-ball VFBGA (8×8) package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clock-synchronous memory operation.
Designed for systems operating from a 3.0 V to 3.6 V supply and a commercial temperature range of 0°C to 70°C, this device targets PC100/PC133-compliant and other parallel SDRAM applications that require compact packaging, low-power self-refresh options, and sub-6 ns access timing at higher speed grades.
Key Features
- Memory Core 128 Mbit SDRAM organized as 8M × 16 with four internal banks for concurrent row handling and reduced row-access overhead.
- Performance 167 MHz clock frequency (speed grade -6A) with an access time of 5.4 ns (CL = 3) and a write cycle time (word page) of 12 ns for high-throughput synchronous operation.
- Interface & Timing Fully synchronous parallel SDRAM with programmable burst lengths (1, 2, 4, 8, or full page), internal pipelined operation, and LVTTL-compatible inputs/outputs; PC100 and PC133 compliance is documented in the datasheet.
- Power Single +3.3 V ±0.3 V supply (3.0 V to 3.6 V). Includes standard self-refresh and a low-power self-refresh option (the “L” suffix indicates the low-power variant).
- Refresh & Reliability Supports Auto Refresh and Self Refresh modes with a 64 ms, 4,096-cycle refresh specification to maintain data integrity during standby.
- Package 54-ball Very Fine-pitch BGA (54-VFBGA, 8×8) in a compact footprint suitable for space-constrained board layouts; supplier device package listed as 54-VFBGA (8×8).
- Operating Range Commercial operating temperature range of 0°C to +70°C as specified for the device.
Typical Applications
- PC100/PC133 systems — Use as synchronous parallel DRAM in systems designed to meet PC100 and PC133 timing and interface expectations.
- Embedded memory subsystems — Compact 54-ball VFBGA packaging and standard SDRAM features suit space-constrained embedded designs requiring parallel SDRAM.
- Legacy and industrial controllers — Parallel SDRAM interface and commercial temperature rating make the device appropriate for controllers and equipment using 3.3 V SDRAM memory.
Unique Advantages
- Clock-synchronous pipelined operation: Internal pipelined architecture and registered signals on the positive clock edge enable predictable timing and efficient column-address changes every clock cycle.
- Fast access at higher speed grades: 167 MHz clock support with 5.4 ns access time (CL = 3, -6A) provides low-latency read performance where required.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) permit tuning for sequential access and burst transfer efficiency.
- Low-power standby option: Self-refresh capability with a documented low-power variant (L suffix) reduces power consumption during idle periods.
- Standard supply and signaling: Single +3.3 V supply and LVTTL-compatible I/O simplify integration with existing 3.3 V logic systems.
- Compact BGA packaging: 54-VFBGA (8×8) package provides a small board footprint while retaining full SDRAM functionality.
Why Choose MT48LC8M16A2B4-6A:L TR?
This MT48LC8M16A2B4-6A:L TR SDRAM offers a compact, clock-synchronous memory solution with documented PC100/PC133 compatibility, a high-speed -6A timing option (167 MHz, 5.4 ns access), and a low-power self-refresh variant indicated by the part suffix. It is positioned for designs that require a parallel SDRAM device with predictable timing, flexible burst modes, and a small-footprint BGA package.
Engineers specifying this device will find clear electrical and timing parameters—3.0 V to 3.6 V supply, 0°C to +70°C operating range, 8M × 16 organization, and standard SDRAM refresh modes—making it suitable for commercial systems and embedded applications that rely on established SDRAM features and form factors.
If you would like pricing, availability, or a formal quote for MT48LC8M16A2B4-6A:L TR, please request a quote or contact sales for further assistance.