MT48LC8M16A2B4-6A:L TR

IC DRAM 128MBIT PAR 54VFBGA
Part Description

IC DRAM 128MBIT PAR 54VFBGA

Quantity 817 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2B4-6A:L TR – IC DRAM 128MBIT PAR 54VFBGA

The MT48LC8M16A2B4-6A:L TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface in a 54-ball VFBGA (8×8) package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clock-synchronous memory operation.

Designed for systems operating from a 3.0 V to 3.6 V supply and a commercial temperature range of 0°C to 70°C, this device targets PC100/PC133-compliant and other parallel SDRAM applications that require compact packaging, low-power self-refresh options, and sub-6 ns access timing at higher speed grades.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 8M × 16 with four internal banks for concurrent row handling and reduced row-access overhead.
  • Performance 167 MHz clock frequency (speed grade -6A) with an access time of 5.4 ns (CL = 3) and a write cycle time (word page) of 12 ns for high-throughput synchronous operation.
  • Interface & Timing Fully synchronous parallel SDRAM with programmable burst lengths (1, 2, 4, 8, or full page), internal pipelined operation, and LVTTL-compatible inputs/outputs; PC100 and PC133 compliance is documented in the datasheet.
  • Power Single +3.3 V ±0.3 V supply (3.0 V to 3.6 V). Includes standard self-refresh and a low-power self-refresh option (the “L” suffix indicates the low-power variant).
  • Refresh & Reliability Supports Auto Refresh and Self Refresh modes with a 64 ms, 4,096-cycle refresh specification to maintain data integrity during standby.
  • Package 54-ball Very Fine-pitch BGA (54-VFBGA, 8×8) in a compact footprint suitable for space-constrained board layouts; supplier device package listed as 54-VFBGA (8×8).
  • Operating Range Commercial operating temperature range of 0°C to +70°C as specified for the device.

Typical Applications

  • PC100/PC133 systems — Use as synchronous parallel DRAM in systems designed to meet PC100 and PC133 timing and interface expectations.
  • Embedded memory subsystems — Compact 54-ball VFBGA packaging and standard SDRAM features suit space-constrained embedded designs requiring parallel SDRAM.
  • Legacy and industrial controllers — Parallel SDRAM interface and commercial temperature rating make the device appropriate for controllers and equipment using 3.3 V SDRAM memory.

Unique Advantages

  • Clock-synchronous pipelined operation: Internal pipelined architecture and registered signals on the positive clock edge enable predictable timing and efficient column-address changes every clock cycle.
  • Fast access at higher speed grades: 167 MHz clock support with 5.4 ns access time (CL = 3, -6A) provides low-latency read performance where required.
  • Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) permit tuning for sequential access and burst transfer efficiency.
  • Low-power standby option: Self-refresh capability with a documented low-power variant (L suffix) reduces power consumption during idle periods.
  • Standard supply and signaling: Single +3.3 V supply and LVTTL-compatible I/O simplify integration with existing 3.3 V logic systems.
  • Compact BGA packaging: 54-VFBGA (8×8) package provides a small board footprint while retaining full SDRAM functionality.

Why Choose MT48LC8M16A2B4-6A:L TR?

This MT48LC8M16A2B4-6A:L TR SDRAM offers a compact, clock-synchronous memory solution with documented PC100/PC133 compatibility, a high-speed -6A timing option (167 MHz, 5.4 ns access), and a low-power self-refresh variant indicated by the part suffix. It is positioned for designs that require a parallel SDRAM device with predictable timing, flexible burst modes, and a small-footprint BGA package.

Engineers specifying this device will find clear electrical and timing parameters—3.0 V to 3.6 V supply, 0°C to +70°C operating range, 8M × 16 organization, and standard SDRAM refresh modes—making it suitable for commercial systems and embedded applications that rely on established SDRAM features and form factors.

If you would like pricing, availability, or a formal quote for MT48LC8M16A2B4-6A:L TR, please request a quote or contact sales for further assistance.

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