MT48LC8M16A2B4-6A XIT:L TR
| Part Description |
IC DRAM 128MBIT PAR 54VFBGA |
|---|---|
| Quantity | 227 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2B4-6A XIT:L TR – IC DRAM 128MBIT PAR 54VFBGA
The MT48LC8M16A2B4-6A XIT:L TR is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It delivers fully synchronous, pipelined operation with internal banks and programmable burst lengths for use in systems that require standard parallel SDRAM memory.
Designed for operation from a single +3.3 V ±0.3 V supply and an operating temperature range of −40°C to +85°C, this device targets applications that need high-speed parallel memory access and robust operating-range support.
Key Features
- Memory Core SDRAM, 128 Mbit capacity organized as 8M × 16 with four internal banks for improved access efficiency.
- Performance Clock frequency up to 167 MHz (speed grade -6A) with a CL = 3 access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
- Interface Parallel memory interface with LVTTL-compatible inputs and outputs; fully synchronous operation with all signals registered on the positive clock edge.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page); Auto Precharge including concurrent auto precharge; Auto Refresh with 64 ms / 4,096-cycle refresh.
- Low-Power and Self-Refresh Supports Self Refresh Mode with standard and optional low-power variants to retain state during reduced-power intervals.
- Power Single +3.3 V ±0.3 V supply (specified 3.0 V to 3.6 V).
- Package and Thermal 54-ball VFBGA (8 × 8) package; industrial operating temperature range −40°C to +85°C.
Typical Applications
- Parallel system memory Used as on-board SDRAM in designs requiring a 128 Mbit parallel SDRAM footprint and standard SDRAM timings.
- Embedded controllers and processors Provides external synchronous memory for processors or controllers that use parallel SDRAM interfaces.
- Industrial equipment Suited for systems operating across −40°C to +85°C where a 3.3 V SDRAM solution is required.
- Legacy and refresh designs Drop-in memory option for existing PC100/PC133-class or similar parallel SDRAM designs that require the specified timing and package.
Unique Advantages
- High-speed access: Supports up to 167 MHz clocking and 5.4 ns CL = 3 access time (speed grade -6A), enabling fast read/write responsiveness in parallel-memory systems.
- Flexible burst operation: Programmable burst lengths (including full-page) allow tuning of transfer size for different system throughput requirements.
- Banked architecture: Four internal banks hide row access and precharge latency, improving effective throughput for typical access patterns.
- Standard 3.3 V supply: Operates from a single +3.3 V ±0.3 V supply (3.0 V–3.6 V), simplifying power-rail requirements in legacy and industrial designs.
- Industrial temperature capability: Rated for −40°C to +85°C, enabling deployment in temperature-demanding environments.
- Compact VFBGA package: 54-ball VFBGA (8 × 8) reduces board footprint while providing the required I/O count for parallel SDRAM connections.
Why Choose IC DRAM 128MBIT PAR 54VFBGA?
The MT48LC8M16A2B4-6A XIT:L TR combines synchronous, pipelined SDRAM architecture with industrial temperature range and a compact 54-ball VFBGA package, delivering a balanced solution for systems needing 128 Mbit of parallel SDRAM. Its timing characteristics (up to 167 MHz and 5.4 ns access at CL = 3), programmable burst modes, and banked design make it appropriate for embedded and industrial designs that require predictable synchronous memory behavior.
This device is a suitable option for designers seeking a standard +3.3 V parallel SDRAM memory component with self-refresh capability and proven SDRAM features such as Auto Precharge and Auto Refresh, providing long-term usability in maintenance, refresh, or industrial product lines.
Request a quote or submit an inquiry to obtain pricing, availability, and additional technical details for the MT48LC8M16A2B4-6A XIT:L TR.