MT48LC8M16A2B4-6A XIT:L TR

IC DRAM 128MBIT PAR 54VFBGA
Part Description

IC DRAM 128MBIT PAR 54VFBGA

Quantity 227 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2B4-6A XIT:L TR – IC DRAM 128MBIT PAR 54VFBGA

The MT48LC8M16A2B4-6A XIT:L TR is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It delivers fully synchronous, pipelined operation with internal banks and programmable burst lengths for use in systems that require standard parallel SDRAM memory.

Designed for operation from a single +3.3 V ±0.3 V supply and an operating temperature range of −40°C to +85°C, this device targets applications that need high-speed parallel memory access and robust operating-range support.

Key Features

  • Memory Core SDRAM, 128 Mbit capacity organized as 8M × 16 with four internal banks for improved access efficiency.
  • Performance Clock frequency up to 167 MHz (speed grade -6A) with a CL = 3 access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
  • Interface Parallel memory interface with LVTTL-compatible inputs and outputs; fully synchronous operation with all signals registered on the positive clock edge.
  • Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page); Auto Precharge including concurrent auto precharge; Auto Refresh with 64 ms / 4,096-cycle refresh.
  • Low-Power and Self-Refresh Supports Self Refresh Mode with standard and optional low-power variants to retain state during reduced-power intervals.
  • Power Single +3.3 V ±0.3 V supply (specified 3.0 V to 3.6 V).
  • Package and Thermal 54-ball VFBGA (8 × 8) package; industrial operating temperature range −40°C to +85°C.

Typical Applications

  • Parallel system memory Used as on-board SDRAM in designs requiring a 128 Mbit parallel SDRAM footprint and standard SDRAM timings.
  • Embedded controllers and processors Provides external synchronous memory for processors or controllers that use parallel SDRAM interfaces.
  • Industrial equipment Suited for systems operating across −40°C to +85°C where a 3.3 V SDRAM solution is required.
  • Legacy and refresh designs Drop-in memory option for existing PC100/PC133-class or similar parallel SDRAM designs that require the specified timing and package.

Unique Advantages

  • High-speed access: Supports up to 167 MHz clocking and 5.4 ns CL = 3 access time (speed grade -6A), enabling fast read/write responsiveness in parallel-memory systems.
  • Flexible burst operation: Programmable burst lengths (including full-page) allow tuning of transfer size for different system throughput requirements.
  • Banked architecture: Four internal banks hide row access and precharge latency, improving effective throughput for typical access patterns.
  • Standard 3.3 V supply: Operates from a single +3.3 V ±0.3 V supply (3.0 V–3.6 V), simplifying power-rail requirements in legacy and industrial designs.
  • Industrial temperature capability: Rated for −40°C to +85°C, enabling deployment in temperature-demanding environments.
  • Compact VFBGA package: 54-ball VFBGA (8 × 8) reduces board footprint while providing the required I/O count for parallel SDRAM connections.

Why Choose IC DRAM 128MBIT PAR 54VFBGA?

The MT48LC8M16A2B4-6A XIT:L TR combines synchronous, pipelined SDRAM architecture with industrial temperature range and a compact 54-ball VFBGA package, delivering a balanced solution for systems needing 128 Mbit of parallel SDRAM. Its timing characteristics (up to 167 MHz and 5.4 ns access at CL = 3), programmable burst modes, and banked design make it appropriate for embedded and industrial designs that require predictable synchronous memory behavior.

This device is a suitable option for designers seeking a standard +3.3 V parallel SDRAM memory component with self-refresh capability and proven SDRAM features such as Auto Precharge and Auto Refresh, providing long-term usability in maintenance, refresh, or industrial product lines.

Request a quote or submit an inquiry to obtain pricing, availability, and additional technical details for the MT48LC8M16A2B4-6A XIT:L TR.

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