MT48LC8M16A2B4-75 IT:G TR
| Part Description |
IC DRAM 128MBIT PAR 54VFBGA |
|---|---|
| Quantity | 694 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2B4-75 IT:G TR – IC DRAM 128MBIT PAR 54VFBGA
The MT48LC8M16A2B4-75 IT:G TR is a 128 Mbit SDR SDRAM device organized as 8M × 16 with a parallel memory interface in a 54-ball VFBGA (8 mm × 8 mm) package. It implements fully synchronous SDRAM architecture with internal pipelined operation and is PC100/PC133-compliant for systems operating at 133 MHz.
This device is intended for designs requiring synchronous DRAM storage with features such as programmable burst lengths, internal banked memory for row access/precharge hiding, and support for auto refresh and self-refresh modes. It supports a 3.0 V to 3.6 V supply and an operating temperature range of –40 °C to +85 °C.
Key Features
- Core Architecture 128 Mbit SDR SDRAM organized as 8M × 16 with 4 internal banks; fully synchronous operation with all signals registered on the positive edge of the system clock.
- Performance / Timing PC100- and PC133-compliant operation at a 133 MHz clock; this -75 speed grade targets 3-3-3 timing (RCD-RP-CL). Write cycle time (word/page) is specified at 15 ns.
- Burst and Pipelining Internal pipelined operation with programmable burst lengths (BL = 1, 2, 4, 8, or full page) and the ability to change column address every clock cycle.
- Refresh and Power Modes Supports auto refresh and self-refresh modes (standard and low power options noted in the datasheet) and provides 4096-cycle refresh support as specified for commercial and industrial operation.
- Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs as documented in the datasheet.
- Power Single-supply operation: 3.0 V to 3.6 V (3.3 V ±0.3 V referenced in datasheet content).
- Package 54-ball VFBGA package (8 mm × 8 mm) in a 54-VFBGA (8×8) supplier device package for compact board-level integration.
- Temperature Range Industrial ambient operating range: –40 °C to +85 °C (TA).
Unique Advantages
- PC133-Compliant Timing: Enables synchronous operation at 133 MHz with documented 3-3-3 timing for the -75 speed grade, supporting legacy PC100/PC133 system designs.
- Flexible Burst and Pipelined Access: Programmable burst lengths and internal pipelining permit fine-grained control of column accesses and data throughput per clock cycle.
- Compact BGA Footprint: 54-ball VFBGA (8×8 mm) package reduces PCB area for space-constrained applications while providing a robust solderable package.
- Industrial Temperature Capability: Rated for −40 °C to +85 °C, suitable for designs that require extended ambient temperature operation.
- Single-Supply Operation: Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails for straightforward integration.
- Refresh and Self-Refresh Support: Implements auto refresh and self-refresh modes with 4096-cycle refresh behavior documented for use across commercial and industrial ranges.
Why Choose IC DRAM 128MBIT PAR 54VFBGA?
The MT48LC8M16A2B4-75 IT:G TR is positioned for designs that require synchronous, parallel DRAM storage in a compact BGA package with industrial temperature capability. Its PC133-compliant operation, programmable burst lengths, and internal bank architecture provide predictable timing and flexible data access patterns for systems that rely on SDRAM.
This device is suited to projects needing a compact 128 Mbit SDRAM solution with documented timing grades and standard refresh/power modes, delivering long-term integration options where compatibility with 3.3 V system rails and extended temperature operation are important.
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