MT48LC8M16A2B4-75:G TR

The MT48LC8M16A2B4-75:G TR is a 128 Mbit SDR SDRAM device in a 54-ball VFBGA (8×8 mm) package. It implements an 8M × 16 memory organization with four internal banks and provides a parallel SDRAM interface for commercial-temperature embedded applications.

Designed to operate from a 3.0 V to 3.6 V supply and with a 133 MHz clock frequency option, this device targets systems requiring synchronous, pipelined DRAM with programmable burst features, auto refresh and internal bank management for efficient row/column access.

Key Features

• SDR SDRAM core Fully synchronous SDRAM architecture with all signals registered on the positive edge of the system clock.
• Memory organization 128 Mbit capacity implemented as 8M × 16 with four internal banks (2M × 16 × 4 banks as defined in the device configuration).
• Performance 133 MHz clock frequency option with an access time listed at 5.4 ns and a write cycle time (word/page) of 15 ns.
• Programmable burst and pipelining Programmable burst lengths (1, 2, 4, 8, or full page) and internal pipelined operation allowing column address changes every clock cycle.
• Refresh and power management Auto refresh and self-refresh modes (standard and low power options noted in the datasheet) with 4K refresh cycles supported.
• Voltage and I/O Single-supply operation across 3.0 V to 3.6 V and LVTTL-compatible inputs/outputs as described in the device documentation.
• Package and temperature 54-ball VFBGA (8×8 mm) package; commercial operating temperature range 0°C to +70°C.
• Standards compliance PC100- and PC133-compliant timing options per the device datasheet.

Typical Applications

• Embedded system memory Board-level DRAM for embedded designs that require a parallel SDRAM interface and commercial-temperature operation.
• Legacy and refresh designs Replacement or upgrades in systems designed around PC100/PC133 SDRAM timing and parallel memory interfaces.
• Compact, board-level modules Low-profile VFBGA packaging for space-constrained applications where a small BGA footprint is required.

Unique Advantages

• Synchronous SDRAM timing Positive-edge registered signals and PC100/PC133 timing options simplify integration with synchronous system clocks.
• Flexible burst and bank architecture Programmable burst lengths and four internal banks enable efficient data transfer patterns and column address changes every cycle.
• Compact BGA package 54-ball VFBGA (8×8 mm) provides a high-density, low-profile solution for board-level memory integration.
• Commercial temperature rating Specified for 0°C to +70°C operation for use in standard commercial applications.
• Wide supply range 3.0 V to 3.6 V single-supply operation accommodates common 3.3 V system rails.

Why Choose MT48LC8M16A2B4-75:G TR?

The MT48LC8M16A2B4-75:G TR delivers a compact, commercial-temperature SDRAM option with synchronous operation, programmable burst modes and internal bank architecture suitable for designs requiring parallel SDRAM memory. Its PC100/PC133-compliant timing options, 133 MHz clock capability and standard SDRAM features such as auto refresh and self-refresh modes make it a practical choice for embedded and board-level memory applications.

Engineers selecting this device benefit from clear datasheet guidance on timing, refresh behavior and package details, enabling predictable integration into systems that use parallel SDRAM interfaces and 3.3 V-class power rails.

For pricing, availability, lead-time details or to request a formal quote for MT48LC8M16A2B4-75:G TR, please submit a quote request or contact sales with your quantity and delivery requirements.