MT48LC8M16A2P-6A AAT:L TR

The MT48LC8M16A2P-6A AAT:L TR is a 128 Mbit SDRAM device organized as 8M × 16 with a parallel memory interface. It delivers high-speed volatile storage with specified timing and supply characteristics for board-level memory expansion.

Key attributes include a 167 MHz clock frequency, 5.4 ns access time, 3.0–3.6 V supply range, AEC-Q100 qualification and a 54‑lead TSOP II package (0.400", 10.16 mm width), making the part suitable for designs that require defined electrical, timing and environmental performance.

Key Features

• Memory Core 128 Mbit SDRAM organized as 8M × 16 for parallel DRAM applications.
• Performance 167 MHz clock frequency with 5.4 ns access time and a 12 ns write cycle time (word/page).
• Interface Parallel memory interface for integration with parallel DRAM buses and controllers.
• Power Operates from 3.0 V to 3.6 V, providing a defined supply range for system power budgeting.
• Qualification & Grade AEC‑Q100 qualification and listed automotive grade for use in automotive-qualified designs.
• Package & Mechanical 54-TSOP II package (0.400", 10.16 mm width) providing a compact board-level footprint.
• Temperature Range Rated for −40 °C to 105 °C (TA) to support extended ambient operation.

Typical Applications

• Automotive systems — AEC‑Q100 qualification and automotive grade make this SDRAM appropriate for automotive electronic modules that require qualified memory components.
• Parallel memory expansion — Use as board-level parallel DRAM to expand volatile storage in embedded systems with parallel memory controllers.
• High-speed buffering — 167 MHz clock and 5.4 ns access time support higher-frequency data buffering and transient storage needs.
• Space-constrained PCB designs — 54‑TSOP II package suits applications where a compact footprint and controlled package dimensions are required.

Unique Advantages

• Automotive qualification: AEC‑Q100 qualification and automotive grade provide documented suitability for automotive design requirements.
• Defined high-speed timing: 167 MHz clock, 5.4 ns access time and 12 ns write cycle time give predictable performance for timing-sensitive designs.
• Wide supply tolerance: 3.0–3.6 V operating range simplifies integration into systems with nominal 3 V power rails.
• Robust temperature rating: −40 °C to 105 °C (TA) supports operation across extended ambient conditions.
• Standard parallel interface: Parallel memory interface enables straightforward connection to parallel DRAM controllers and legacy memory buses.
• Compact TSOP II package: 54‑lead TSOP II (0.400", 10.16 mm) balances density and assembly compatibility for board-level designs.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

This MT48LC8M16A2P-6A AAT:L TR SDRAM combines defined high-speed timing, a parallel interface and automotive-grade qualification in a compact 54‑TSOP II package. Its documented electrical, timing and environmental specifications make it a practical choice for designs that require verifiable performance and qualification status.

The device is suited to engineers and procurement teams designing automotive and embedded systems that need a qualified, parallel-interface volatile memory with clear thermal, voltage and timing characteristics for reliable integration and lifecycle support.

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