MT48LC8M16A2P-6A AIT:L

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 300 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2P-6A AIT:L – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC8M16A2P-6A AIT:L is a 128 Mbit volatile SDRAM organized as 8M × 16, manufactured by Micron Technology Inc. It provides parallel-interface SDRAM memory in a compact 54‑TSOP II package.

Designed for applications requiring automotive-grade qualification and extended temperature operation, this device delivers defined timing and voltage characteristics for integration into systems with parallel memory buses.

Key Features

  • Memory Architecture 128 Mbit SDRAM organized as 8M × 16, offering a parallel 16-bit data path for straightforward bus integration.
  • Performance 167 MHz clock frequency with a 5.4 ns access time and a 12 ns write cycle time (word page), providing deterministic SDRAM timing for system design.
  • Power Operates from a 3.0 V to 3.6 V supply range, enabling compatibility with 3 V-class system rails.
  • Reliability / Qualification AEC‑Q100 qualification and an automotive grade designation support use in environments where automotive-level qualification is required.
  • Package 54‑TSOP (0.400", 10.16 mm width) in a 54‑TSOP II supplier device package, supporting compact board layouts.
  • Temperature Range Rated for operation from −40 °C to 85 °C (TA), suitable for extended temperature operation.

Typical Applications

  • Automotive electronics — Memory subsystem for automotive control modules where AEC‑Q100 qualification and extended temperature range are required.
  • Parallel-interface memory subsystems — Provides parallel SDRAM storage for designs that require a 16-bit data interface and defined SDRAM timing.
  • Embedded controllers — On-board volatile DRAM for embedded systems needing mid-density SDRAM in a compact TSOP footprint.

Unique Advantages

  • Automotive-qualified (AEC‑Q100): Explicit AEC‑Q100 qualification supports designs that demand automotive-grade component qualification.
  • Defined SDRAM timing: 5.4 ns access time and 12 ns write cycle time provide predictable memory performance for system timing analysis.
  • 3.0–3.6 V supply range: Compatibility with 3 V-class rails simplifies power-domain planning in mixed-voltage systems.
  • Compact 54‑TSOP II package: Small footprint (0.400" / 10.16 mm width) aids space-constrained PCB layouts.
  • 16-bit parallel organization: 8M × 16 organization enables direct integration with 16-bit parallel memory buses.

Why Choose MT48LC8M16A2P-6A AIT:L?

The MT48LC8M16A2P-6A AIT:L combines a mid-density 128 Mbit SDRAM architecture with defined performance metrics, automotive qualification, and a compact 54‑TSOP II package. It is positioned for designs that require a qualified, parallel-interface DRAM solution with predictable timing and extended temperature operation.

This part is suitable for engineering teams building systems that need an automotive‑qualified SDRAM device in a small package while maintaining standard 3 V supply compatibility and 16-bit parallel data organization.

Request a quote or submit a bill-of-materials inquiry to receive pricing and availability information for the MT48LC8M16A2P-6A AIT:L.

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