MT48LC8M16A2F4-75:G TR
| Part Description |
IC DRAM 128MBIT PAR 54VFBGA |
|---|---|
| Quantity | 519 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2F4-75:G TR – IC DRAM 128MBIT PAR 54VFBGA
The MT48LC8M16A2F4-75:G TR is a 128 Mbit synchronous DRAM device organized as 8M × 16 with a parallel memory interface. It implements SDR SDRAM architecture and is provided in a compact 54-ball VFBGA package (8 mm × 8 mm).
Designed for systems requiring PC100/PC133-compliant SDRAM storage, this device offers synchronous, pipelined operation with internal bank architecture, programmable burst lengths and standard refresh/autoprecharge features to support predictable memory access patterns.
Key Features
- Memory Architecture
128 Mbit capacity organized as 8M × 16 with 4 internal banks. - SDR SDRAM Core
Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation and column-address change every clock cycle. - Performance
Clock frequency 133 MHz and specified access time of 5.4 ns; write cycle time (word/page) listed at 15 ns. - Burst and Refresh
Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self-refresh modes; supports 64 ms, 4096-cycle refresh for commercial operation. - Interface and I/O
Parallel memory interface with LVTTL-compatible inputs and outputs for standard logic-level interoperability. - Power
Single-supply operation across 3.0 V to 3.6 V (3.3 V ±0.3 V as specified in the datasheet). - Package and Temperature
54-ball VFBGA package (8 mm × 8 mm); commercial operating temperature range 0°C to 70°C.
Unique Advantages
- PC100/PC133 compatibility: Listed PC100- and PC133-compliant in the datasheet, enabling use in systems targeting those SDRAM timing classes.
- Compact BGA footprint: 54-ball VFBGA (8×8 mm) reduces board area compared with larger packages while retaining parallel SDRAM connectivity.
- Deterministic access behavior: Synchronous, pipelined operation with internal banks and programmable burst lengths helps maintain predictable timing for memory transactions.
- Flexible power window: 3.0 V to 3.6 V supply range (single 3.3 V nominal) supports systems with standard 3.3 V power rails.
- Standard refresh and power modes: Auto refresh, auto precharge and self-refresh support retention and low-activity power management as described in the datasheet.
Why Choose IC DRAM 128MBIT PAR 54VFBGA?
The MT48LC8M16A2F4-75:G TR delivers a compact, parallel SDRAM solution for designs requiring 128 Mbit of volatile storage with PC100/PC133-class operation. Its synchronous, pipelined architecture, internal bank structure and programmable burst options provide predictable throughput and straightforward timing integration.
This device is suited to commercial-temperature designs running from 0°C to 70°C that need a 3.3 V-class SDRAM in a small 54-VFBGA package, with standard refresh and self-refresh capabilities documented in the datasheet for reliable memory retention and control.
Request a quote or submit your component inquiry to receive pricing and availability for the MT48LC8M16A2F4-75:G TR.
