MT48LC8M16A2B4-75:G

IC DRAM 128MBIT PAR 54VFBGA
Part Description

IC DRAM 128MBIT PAR 54VFBGA

Quantity 755 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2B4-75:G – IC DRAM 128MBIT PAR 54VFBGA

The MT48LC8M16A2B4-75:G is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel memory interface. It is supplied in a compact 54-ball VFBGA (8 mm × 8 mm) package and is designed for commercial-temperature applications.

This SDRAM implements fully synchronous, pipelined operation with internal banks and programmable burst lengths, providing predictable timing and flexible data transfer modes for system memory applications that require standard PC100/PC133 timing and a single 3.3 V supply range.

Key Features

  • Core / Architecture 128 Mbit SDRAM organized as 8M × 16 with 4 internal banks (2M × 16 × 4 banks configuration).
  • Memory Type & Interface SDR SDRAM with a parallel memory interface and LVTTL-compatible inputs and outputs for standard synchronous memory controller connections.
  • Performance & Timing Rated for a 133 MHz clock frequency (PC133 compliant). Speed grade -75 targets RCD-RP-CL = 3-3-3 with 20 ns timing; device data lists an access time of 5.4 ns and a write cycle time (word page) of 15 ns.
  • Power Single 3.3 V supply specification (3.0 V to 3.6 V range), simplifying power-rail requirements for typical system designs.
  • Refresh & Modes Supports auto refresh and self-refresh modes, along with programmable burst lengths (1, 2, 4, 8, or full page) and auto precharge options for efficient memory management.
  • Package 54-ball VFBGA (8 mm × 8 mm) packaging provides a small footprint for high-density board layouts; supplier device package listed as 54-VFBGA (8×8).
  • Operating Range Commercial operating temperature: 0°C to +70°C (TA).

Unique Advantages

  • Standard-compliant timing: PC100/PC133 compliance and documented RCD/RP/CL timing allow integration with controllers targeting PC-style SDRAM parameters.
  • Flexible burst and bank control: Programmable burst lengths and internal bank architecture enable fine-grained control of sequential and random access patterns.
  • Simplified power design: Single 3.3 V supply range (3.0 V–3.6 V) reduces the need for multiple supply rails.
  • Compact BGA package: 54-ball VFBGA (8×8) reduces PCB area for higher board-level density while retaining standard ballout for assembly.
  • Commercial-temperature suitability: Specified 0°C to +70°C operating range for designs targeting commercial-environment applications.

Why Choose IC DRAM 128MBIT PAR 54VFBGA?

The MT48LC8M16A2B4-75:G provides a proven SDRAM architecture with synchronous, pipelined operation, internal bank management, and programmable burst lengths—features useful for systems requiring standard PC100/PC133 timing and predictable memory behavior. Its 8M × 16 organization and 54-ball VFBGA package balance capacity and board-area efficiency for compact system designs.

This device is appropriate for engineers and procurement teams seeking a commercial-temperature, 128 Mbit SDRAM from a major memory manufacturer, with clear timing parameters, single-rail power requirements, and standard refresh and precharge modes to support common synchronous memory controller implementations.

Request a quote or submit an inquiry for pricing and availability for the MT48LC8M16A2B4-75:G to receive lead-time and volume information.

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