MT48LC8M16A2P-6A XIT:L

The MT48LC8M16A2P-6A XIT:L is a 128 Mbit synchronous DRAM organized as 8M × 16 with a parallel memory interface and volatile SDRAM architecture. It provides pipelined, fully synchronous operation with internal banks and programmable burst lengths for system memory and buffering functions.

Key device parameters from the datasheet include a maximum clock frequency of 167 MHz, typical access time of 5.4 ns, a write cycle time (word page) of 12 ns, and a single-supply operating range of 3.0 V to 3.6 V. The device is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and supports an operating ambient temperature range of -40°C to +85°C.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with four internal banks to hide row access and precharge latency.
• Performance Rated for up to 167 MHz clock frequency with a 5.4 ns access time (documented for the -6A speed grade).
• Programmable Burst and Pipelined Operation Supports programmable burst lengths (1, 2, 4, 8 or full page) and internal pipelined column access allowing column address changes every clock cycle.
• Refresh and Power Modes Auto Refresh and Auto Precharge (including concurrent auto precharge) plus Self Refresh modes; 64 ms, 4,096-cycle refresh is supported.
• Interface and Signaling Fully synchronous operation with LVTTL-compatible inputs and outputs and a parallel memory interface for system integration.
• Voltage and Timing Single +3.3 V nominal supply (documented range 3.0 V to 3.6 V) and a write cycle time (word page) of 12 ns.
• Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) package; operating ambient range documented at -40°C to +85°C.

Typical Applications

• Embedded system memory Acts as synchronous parallel memory for systems that require pipelined SDRAM and burst access for buffering and working memory.
• Graphics and frame buffering Provides organized x16 memory storage suitable for high-throughput read/write bursts in buffering scenarios.
• Consumer and industrial electronics Usable where a 3.0–3.6 V supply and operation across -40°C to +85°C are required for system DRAM functions.

Unique Advantages

• High-speed synchronous operation 167 MHz clock capability with 5.4 ns access time (speed grade -6A) supports low-latency read performance.
• Flexible burst control Programmable burst lengths and internal pipelined operation enable tighter control of memory transfer granularity and throughput.
• Robust refresh and low-power modes Auto Refresh, Auto Precharge and Self Refresh options with a 4,096-cycle refresh provide reliable data retention and power management.
• Standard 3.3 V supply compatibility Operates from 3.0 V to 3.6 V, matching common system power rails for straightforward integration.
• Compact board-level footprint 54-pin TSOP II (400 mil) package offers a compact package option for space-constrained printed circuit board designs.
• Wide operating temperature Specified for -40°C to +85°C ambient operation for use in temperature-variable environments.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2P-6A XIT:L is positioned for designs that require a synchronous, parallel SDRAM solution with documented timing and electrical parameters. Its combination of 8M × 16 organization, programmable burst lengths, and internal banking supports pipelined memory access patterns and predictable timing for system-level memory designs.

Manufactured by Micron Technology, Inc., the device offers a defined operating voltage window, industrial temperature operation, and a compact 54-pin TSOP II package—features that support repeatable integration into embedded and board-level designs where a 128 Mbit SDRAM is required.

Request a quote or submit an inquiry for MT48LC8M16A2P-6A XIT:L to obtain pricing, availability, and lead-time information.