MT48LC8M16A2P-75 IT:G

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 291 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2P-75 IT:G – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC8M16A2P-75 IT:G is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined operation with internal banks and programmable burst lengths for predictable, cycle-registered memory access.

Designed for systems that require a compact parallel SDRAM solution, this device targets industrial and embedded applications that need a 3.3 V supply range and operation across an industrial temperature range (–40°C to +85°C).

Key Features

  • Memory Core 128 Mbit SDRAM organized as 8M × 16 with internal bank architecture (4 banks) to hide row access and precharge latency.
  • Performance PC100- and PC133-compliant operation with a clock frequency of 133 MHz; datasheet timing options include CAS latency and cycle-time grades to match system timing requirements.
  • Access & Cycle Times Fast synchronous operation with noted access time and write-cycle characteristics (access time: 5.4 ns; write cycle time (word/page): 15 ns) for steady data throughput.
  • Interface & Operation Fully synchronous, positive-edge clocked signals; pipelined architecture allows column address changes every clock cycle and programmable burst lengths (1, 2, 4, 8, or full page).
  • Refresh & Auto Modes Auto refresh (4K refresh cycles) with auto precharge and standard self-refresh support; refresh timing documented for commercial and industrial options.
  • Power Single-supply operation at 3.3 V nominal (3.0 V to 3.6 V specified).
  • I/O Levels LVTTL-compatible inputs and outputs for interface compatibility with common logic families.
  • Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package with industrial operating temperature range –40°C to +85°C (TA).

Typical Applications

  • Industrial Embedded Systems Memory for embedded controllers and modules where industrial temperature operation (–40°C to +85°C) and a compact TSOP footprint are required.
  • Legacy PC100/PC133 Designs Replacement or subsystem memory in systems designed to PC100/PC133 timing and clock domains.
  • Buffering and Data Capture Synchronous, pipelined SDRAM suited for buffering, burst transfers, and temporary data storage in communications or measurement equipment.
  • Board-Level Memory Expansion Parallel SDRAM option for designs needing 128 Mbit density in a 54-pin TSOP II package for space-constrained PCBs.

Unique Advantages

  • Industrial Temperature Range: Rated for –40°C to +85°C, enabling deployment in temperature-challenging environments without additional thermal qualification notes.
  • Synchronous, Pipelined Architecture: Registered, positive-edge clocked signals and internal banks allow consistent timing behavior and column address changes every clock cycle.
  • PC100/PC133 Compatibility: Documented compliance with PC100 and PC133 timing grades simplifies integration into existing systems targeting those clock domains.
  • Compact TSOP II Footprint: 54-pin TSOP II (0.400", 10.16 mm) package provides a low-profile, board-friendly memory option for dense PCB layouts.
  • Flexible Burst and Auto Modes: Programmable burst lengths, auto precharge, and auto refresh modes reduce controller complexity for common memory access patterns.
  • Single 3.3 V Supply: Standard 3.3 V ±0.3 V power requirement aligns with common system rails and simplifies power management.

Why Choose MT48LC8M16A2P-75 IT:G?

The MT48LC8M16A2P-75 IT:G offers a compact, industrial-temperature SDRAM solution with synchronous, pipelined operation and PC100/PC133 timing compatibility. Its 128 Mbit density in an industry-standard 54-pin TSOP II package makes it suitable for embedded and board-level memory implementations that require predictable timing and burst transfer capabilities.

This device is appropriate for design teams seeking a documented, industrial-grade parallel SDRAM with standard 3.3 V supply operation, internal banking for reduced latency, and a set of auto-refresh and precharge features that simplify memory controller implementation.

For pricing, lead-time, or to request a formal quote for MT48LC8M16A2P-75 IT:G, please submit a request to initiate procurement and technical clarification.

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