MT48LC8M16A2P-75:G TR

The MT48LC8M16A2P-75:G TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel memory interface. It implements fully synchronous, pipelined operation with internal bank architecture and programmable burst lengths to support high-throughput, clocked memory systems.

This device targets designs requiring PC100/PC133-compliant SDRAM timing, a 3.3 V single-supply interface, and a compact 54-pin TSOP II package for board-level memory integration within commercial temperature ranges.

Key Features

• Core / Memory Architecture  128 Mbit SDRAM organized as 8M × 16 with four internal banks for hidden row access and concurrent operations.
• Synchronous, Pipelined Operation  Fully synchronous device with all signals registered on the positive edge of the system clock and internal pipelining to allow column address changes every clock cycle.
• PC100 / PC133 Timing (–75 Speed Grade)  PC100- and PC133-compliant timing; the –75 speed grade targets 133 MHz operation with 3-3-3 RCD-RP-CL timing (20 ns).
• Performance Parameters  Specified clock frequency up to 133 MHz, quoted access time of 5.4 ns, and a write cycle time (word page) of 15 ns.
• Refresh and Self-Refresh  Auto refresh with 64 ms / 4096-cycle refresh interval (commercial); supports standard and low-power self-refresh modes (options noted in datasheet).
• Interface and I/O  Parallel memory interface with LVTTL-compatible inputs and outputs and support for programmable burst lengths (1, 2, 4, 8, or full page).
• Supply and Temperature  Single-supply operation at 3.3 V (3.0 V to 3.6 V) and commercial operating temperature range of 0°C to +70°C (TA).
• Package  54-pin TSOP II (0.400", 10.16 mm width) plastic package optimized for board-level integration.

Typical Applications

• PC100/PC133 Memory Subsystems  Use as synchronous DRAM memory in systems that require PC100 or PC133 timing compliance.
• Board-Level Memory Expansion  54-pin TSOP II package provides a compact footprint for adding parallel SDRAM to legacy or embedded boards.
• Clocked Embedded Systems  Suitable for embedded designs that require a 128 Mbit parallel SDRAM with pipelined operation and programmable burst transfers.

Unique Advantages

• PC133-Capable Performance: –75 speed grade supports 133 MHz operation and established 3-3-3 timing targets for predictable system timing.
• Flexible Burst and Bank Management: Programmable burst lengths and four internal banks enable efficient data transfers and improved throughput for burst-oriented workloads.
• Single 3.3 V Supply: Simplifies power sequencing and integration into systems using a common 3.3 V rail (3.0 V to 3.6 V specified).
• Compact TSOP II Package: 54-pin TSOP II footprint supports high-density board layouts while retaining a parallel interface for straightforward routing.
• Standardized Refresh Support: Built-in auto refresh with defined 4096-cycle intervals reduces external refresh management and eases system design.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2P-75:G TR provides a verified 128 Mbit SDRAM option in a compact 54-pin TSOP II package, combining PC100/PC133-compliant timing, pipelined internal architecture, and programmable burst capabilities. Its 3.3 V single-supply design and LVTTL-compatible I/O make it suitable for integration into clocked memory subsystems that require predictable synchronous behavior within a commercial temperature range.

Backed by Micron Technology's 128 Mb SDRAM family and documented timing options, this device is appropriate for designs that need a straightforward parallel SDRAM memory element with defined refresh behavior and package compatibility for board-level deployment.

For pricing, availability, or to request a quote for MT48LC8M16A2P-75:G TR, please submit a quote request or contact sales to discuss your project requirements.