MT48LC8M16A2P-7E IT:G TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,052 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-7E IT:G TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-7E IT:G TR is a 128 Mbit (8M × 16) synchronous DRAM (SDR SDRAM) device in a 54-pin TSOP II package. It implements a fully synchronous, pipelined architecture with internal banks and a parallel memory interface suitable for systems requiring PC100/PC133-class SDRAM performance.
Targeted at industrial and embedded applications, this device delivers 133 MHz clock operation with low-latency timing options while supporting standard SDRAM features such as programmable burst lengths, auto/precharge modes and self-refresh capability.
Key Features
- Memory Architecture 128 Mbit organized as 8M × 16 with 4 internal banks to improve row access concurrency and throughput.
- Synchronous SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation enabling column address changes every clock cycle.
- Performance / Timing PC100- and PC133-compliant; this -7E speed grade targets 133 MHz operation with 2-2-2 timing (RCD-RP-CL = 15 ns). Listed access time: 5.4 ns; write cycle time (word/page): 14 ns.
- Burst and Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto precharge, auto refresh and standard self-refresh modes with 4K refresh cycles.
- Signal & I/O LVTTL-compatible inputs and outputs for standard logic interfacing on a parallel memory bus.
- Power Single-supply operation at 3.3V (specified 3.0V to 3.6V) for compatibility with common system power rails.
- Package & Mounting 54-pin TSOP II (0.400", 10.16 mm width) plastic package (54-TSOP II) optimized for board-level mounting in compact designs.
- Operating Temperature Industrial temperature range: –40°C to +85°C (TA) for deployment in temperature-challenging environments.
Typical Applications
- Industrial Embedded Systems Memory subsystem for embedded controllers and industrial electronics that require operation across –40°C to +85°C.
- PC100/PC133 Memory Subsystems Use in systems or modules that require PC100/PC133-class SDRAM timing and synchronous parallel DRAM interfacing.
- Compact Board-Level Designs Applications where a 54-TSOP II footprint and 3.3V single-supply SDRAM are needed for space-constrained PCBs.
Unique Advantages
- Industrial Temperature Rating: Specified for –40°C to +85°C operation, enabling deployment in harsh or variable-temperature environments.
- PC133 Performance (-7E): 133 MHz clock operation with 2-2-2 timing (15 ns RCD/RP/CL target) for low-latency synchronous access.
- Flexible Burst and Refresh Options: Programmable burst lengths and support for auto-refresh and self-refresh modes simplify memory control and refresh management.
- Standard 3.3V Supply: Operates from 3.0V to 3.6V, matching common system power rails and easing integration.
- Compact TSOP II Footprint: 54-pin 0.400" TSOP II package provides a small board footprint while maintaining a parallel memory interface.
- Synchronous, Pipelined Architecture: Fully synchronous signals and internal pipelining allow column address changes every clock cycle for predictable timing behavior.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC8M16A2P-7E IT:G TR offers a verified SDR SDRAM feature set with PC100/PC133 timing, industrial temperature operation, and a compact 54-TSOP II package. It is well suited for designs that need a synchronous parallel DRAM solution with programmable burst modes, standard refresh management and 3.3V single-supply operation.
This device is appropriate for engineers specifying mature SDRAM technology into industrial and embedded platforms where predictable timing, standard supply rails, and a small package footprint are priorities.
If you would like pricing, lead-time, or to request a formal quote for MT48LC8M16A2P-7E IT:G TR, please submit a request and our team will provide a quote and availability details.