MT48LC8M16A2P-7E:G

The MT48LC8M16A2P-7E:G from Micron Technology Inc. is a 128 Mbit synchronous DRAM organized as 8M × 16 with a parallel memory interface. It implements SDR SDRAM architecture with internal pipelined operation, multiple internal banks and programmable burst lengths for synchronous memory subsystem designs.

Designed for PC100/PC133-class synchronous memory implementations, this device provides a 133 MHz clock option, single 3.3 V supply operation and a compact 54-pin TSOP II package for space-conscious board layouts.

Key Features

• Memory Architecture 128 Mbit capacity organized as 8M × 16 with four internal banks to improve row access efficiency and support pipelined operation.
• SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelining for column-address changes every clock cycle.
• Performance / Timing 133 MHz clock frequency (PC133), CL = 2 (speed grade -7E) and an access time specified at 5.4 ns; supports programmable burst lengths of 1, 2, 4, 8 or full page.
• Refresh and Power Management Auto Refresh, Auto Precharge, and self-refresh modes (standard and low power options noted in datasheet); 4096-cycle refresh count (64 ms commercial spec).
• Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for standard synchronous system integration.
• Voltage and Operating Range Single-supply operation from 3.0 V to 3.6 V and a commercial operating temperature range of 0 °C to +70 °C (TA).
• Package 54-pin TSOP II (400 mil, 10.16 mm width) plastic package suited for surface-mount assembly.

Typical Applications

• PC-Class Memory Subsystems Use in PC100/PC133-compliant synchronous memory designs requiring 128 Mbit SDRAM capacity and standard parallel interface timing.
• Embedded Memory Modules Integration into space-constrained boards where a 54-pin TSOP II package and 8M × 16 organization meet density and routing requirements.
• System Buffering and Frame Storage Local SDRAM storage for buffering or page-based data access in systems that leverage burst transfers and internal banked operation.

Unique Advantages

• Industry-standard timing compatibility: PC100/PC133 compliance and a 133 MHz speed grade (-7E) simplify integration into existing synchronous memory subsystems.
• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8 or full page) enable tailored transfer sizing to match system bandwidth and latency requirements.
• Banked architecture for efficiency: Four internal banks help hide row access/precharge cycles and support continuous pipelined column access.
• Compact surface-mount package: 54-pin TSOP II (10.16 mm width) provides a small footprint option for dense PCB layouts.
• Straightforward power requirements: Single 3.3 V supply (3.0 V to 3.6 V) keeps power rail design simple for standard 3.3 V systems.

Why Choose MT48LC8M16A2P-7E:G?

The MT48LC8M16A2P-7E:G offers a synchronous 128 Mbit SDRAM solution combining PC100/PC133 timing compatibility, a parallel interface, and a compact 54-pin TSOP II package. Its 8M × 16 organization, internal bank structure and programmable burst modes make it suitable for designs that require deterministic synchronous transfers and efficient row/column management.

This device is appropriate for engineers specifying commercial-temperature, 3.3 V SDRAM where established Micron SDRAM architectures and timing options are required. It delivers predictable timing (133 MHz speed grade) and standard refresh/self-refresh features for stable system memory operation.

Please request a quote or submit a pricing and availability inquiry to receive lead time and ordering information for MT48LC8M16A2P-7E:G.