MT48LC8M16A2P-7E IT:G

The MT48LC8M16A2P-7E IT:G is a 128 Mbit SDRAM organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It is a fully synchronous SDR SDRAM device with internal pipelined operation and internal banks to improve access sequencing.

Designed for systems requiring PC100/PC133-class SDRAM operation and extended operating temperature support, this device delivers 133 MHz clock operation, a single 3.0–3.6 V supply, and an industrial temperature range of −40 °C to +85 °C.

Key Features

• Core / Architecture  Fully synchronous SDR SDRAM with internal pipelined operation; all signals are registered on the positive edge of the system clock.
• Memory Organization  128 Mbit capacity arranged as 8M × 16 with four internal banks to hide row access and precharge timing.
• Performance  133 MHz clock frequency; documented access time 5.4 ns and write cycle time (word page) of 14 ns. Speed grade -7E timing options are supported per the device family.
• Burst and Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page) and support for auto precharge and auto refresh modes to simplify memory sequencing.
• Refresh and Self-Refresh  Auto refresh support with 4096-cycle refresh; standard and low-power self-refresh modes are provided (low-power self-refresh not available on AT devices as noted in device options).
• Power  Single-supply operation at 3.0 V to 3.6 V (3.3 V nominal).
• Interface  Parallel memory interface with LVTTL-compatible inputs and outputs as specified in the device family documentation.
• Package & Temperature  54-pin TSOP II (0.400", 10.16 mm width) package; industrial operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• PC100/PC133-class systems  Use as system DRAM in designs targeting PC100 or PC133 compliant memory architectures.
• Industrial equipment  Suitable for industrial applications that require extended temperature operation (−40 °C to +85 °C) and parallel SDRAM memory.
• Embedded parallel-memory platforms  Integration where a parallel SDRAM with programmable burst lengths and internal banking is required for buffering or working memory.

Unique Advantages

• Industry-standard SDRAM timing:  PC100/PC133-compliant speed grades and documented timing options (including -7E) make system timing integration straightforward.
• High-frequency operation:  133 MHz clock capability supports higher throughput for parallel SDRAM designs.
• Flexible burst and bank management:  Programmable burst lengths and four internal banks enable efficient data streaming and reduced latency between column accesses.
• Extended temperature range:  Industrial −40 °C to +85 °C rating supports deployment in temperature-demanding environments.
• Standard TSOP II footprint:  54-pin TSOP II (0.400", 10.16 mm) package for board-level compatibility with legacy and space-constrained designs.
• Single-supply operation:  3.0–3.6 V supply simplifies power rail requirements for 3.3 V systems.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2P-7E IT:G offers a compact 128 Mbit SDRAM solution with PC100/PC133-class timing, programmable burst modes, and internal banking to support efficient memory access patterns. Its 54-pin TSOP II package and single 3.0–3.6 V supply make it suitable for designs that require a parallel SDRAM footprint with industrial temperature capability.

This device is appropriate for engineers specifying parallel SDRAM for system memory, embedded platforms, or industrial applications where documented timing, self-refresh options, and extended temperature range are required for long-term system reliability.

Request a quote or submit an inquiry to receive pricing and availability information for the MT48LC8M16A2P-7E IT:G.