MT48LC8M16A2P-7E AIT:L TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 81 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-7E AIT:L TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-7E AIT:L TR is a 128 Mbit SDRAM device organized as 8M x 16 with a parallel memory interface in a 54-TSOP II package. It delivers SRAM-like access characteristics for designs requiring standard SDRAM architecture and a compact footprint.
Designed for applications requiring extended temperature operation and industry qualification, this device features a 133 MHz clock frequency, 5.4 ns access time, 14 ns write cycle time (word page), and an operating temperature range of -40°C to 85°C with AEC-Q100 qualification.
Key Features
- Core / Technology SDRAM volatile memory organized as 8M × 16, providing a 128 Mbit density in a parallel DRAM format.
- Performance / Timings 133 MHz clock frequency with a 5.4 ns access time and a 14 ns write cycle time (word page) for predictable data access timing.
- Power Operates from a 3.0 V to 3.6 V supply range to match common 3V system rails.
- Package 54-TSOP II package (0.400", 10.16 mm width) for compact board-level integration where parallel pinout access is required.
- Temperature & Qualification Rated for -40°C to 85°C (TA) and qualified to AEC-Q100, indicating suitability for applications requiring automotive-grade qualification.
- Interface & Format Parallel memory interface in a standard DRAM format for integration into parallel-bus systems and memory expansions.
Typical Applications
- Automotive systems — AEC-Q100 qualification and -40°C to 85°C operating range make this SDRAM suitable for in-vehicle modules and control units requiring qualified memory components.
- Embedded and industrial electronics — Compact 54-TSOP II packaging and parallel interface support memory needs in constrained, rugged embedded systems.
- Parallel-interface memory expansion — Provides 128 Mbit of DRAM capacity in an 8M × 16 organization for systems that use parallel memory buses and require deterministic access timing.
Unique Advantages
- Automotive-qualified reliability: AEC-Q100 qualification combined with an extended -40°C to 85°C temperature range supports designs targeting automotive and similarly demanding environments.
- Deterministic access performance: 133 MHz clock and 5.4 ns access time with a 14 ns write cycle time provide measurable timing characteristics for system design and validation.
- Compact TSOP II package: 54-TSOP (0.400", 10.16 mm width) enables high-density board layouts while preserving a parallel-pin interface.
- Standard 3V supply compatibility: 3.0 V to 3.6 V operating range aligns with common system power rails for straightforward integration.
- Common memory organization: 8M × 16 arrangement offers a standard data width and capacity for parallel DRAM implementations.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC8M16A2P-7E AIT:L TR positions itself as a reliable SDRAM option where automotive qualification, predictable timing, and compact packaging are required. Its combination of 128 Mbit capacity, 8M × 16 organization, and 133 MHz operation supports designs that need measurable performance in a parallel DRAM form factor.
This device is well suited for engineers specifying memory for automotive-grade modules, embedded controllers, or industrial systems that benefit from AEC-Q100 qualification and extended temperature capability. The clear electrical and timing specifications help streamline system validation and integration into existing parallel-memory architectures.
Request a quote or submit an RFQ to receive pricing, availability, and lead-time details for the MT48LC8M16A2P-7E AIT:L TR.